Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study
Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study
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使用源极连接的 p-GaN (SCPG) 抑制 GaN HEMT 中缓冲器引起的电流崩塌：仿真研究
DOI：
10.3390/electronics10080942
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发表时间：
2021-04
期刊：
影响因子：
2.9
通讯作者：
Shen Bo
中科院分区：
文献类型：
--
作者：
Lin Wei;Wang Maojun;Sun Haozhe;Xie Bing;Wen Cheng P.;Hao Yilong;Shen Bo
AlGaN/GaN高电子迁移率晶体管（HEMT）缓冲区中的碳掺杂导致了臭名昭著的电流崩塌现象。本文提出了一种在掺碳半绝缘缓冲层中嵌入源极连接的p型GaN（SCPG）的HEMT结构，以抑制缓冲层诱导的电流崩塌效应。二维瞬态模拟表明，与传统HEMT相比，SCPG-HEMT成功地抑制了缓冲区引起的电流崩塌。基于能带图说明了通过在关态应力之后将空穴从SCPG喷射到高阻缓冲层中来抑制动态导通电阻退化的机制。本文提供了一种创新的器件结构，以潜在地解决GaN功率器件中缓冲器引起的动态导通电阻的退化。
Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation was carried out to show the successful suppression of buffer-induced current collapse in the SCPG-HEMTs compared with conventional HEMTs. The mechanism of suppressing dynamic on-resistance degradation by ejecting holes from the SCPG into the high resistive buffer layer after off-state stress is illustrated based on energy band diagrams. This paper contributes an innovative device structure to potentially solve the buffer-induced degradation of the dynamic on-resistance in GaN power devices.
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