Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces
Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces
复制标题
通过化学锚定到栅极介电表面的非晶全氟聚合物增强聚合物有机场效应晶体管的工作稳定性
DOI：
10.1002/aelm.202000161
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发表时间：
2020
影响因子：
6.2
通讯作者：
Takeuchi Masayuki
中科院分区：
文献类型：
--
作者：
Bulgarevich Kirill;Sakamoto Kenji;Yasuda Takeshi;Minari Takeo;Takeuchi Masayuki
聚合物基有机场效应晶体管（OFFET）的抗偏置应力性能通过在栅极电介质表面涂覆无定形全氟聚合物（CYTOP）而得到显著增强。在提供相对简单的制造工艺的底栅（BG）OFFEs中，CYTOP涂层会导致严重的问题;即，由于CYTOP的疏液特性，有机半导体聚合物的薄膜形成通常会失败。这个问题通过用合适的设计图案化CYTOP涂层来解决。在这里，使用以酰胺基甲硅烷基官能团封端的CYTOP建立了一种简单的光图案化方法。该方法由CYTOP涂层的自限减薄过程、通过光掩模暴露于真空紫外光和显影组成。采用聚（2，5-双（3-十六烷基噻吩-2-基）噻吩并[3，2-B]噻吩）作为半导体聚合物制备BG/顶接触OFET阵列。将其初始电性能和抗偏置应力性能与经十八烷基三氯硅烷（ODTS）处理的栅极绝缘层的OFFERS进行了比较。CYTOP‐和ODTS‐ OFPs显示出近似相同的初始电气特性，器件间差异非常小，而CYTOP‐ OFPs显示出更高的固有偏置应力电阻。因此，旋涂结合简单的光图案化方法是一种有前途的技术，可以在CYTOP层上形成聚合物有机半导体层，并产生表现出非常高的操作稳定性的BG OFFEs。
Bias‐stress resistance of polymer‐based organic field‐effect transistors (OFETs) is considerably enhanced by coating the gate dielectric surface with an amorphous perfluoropolymer (CYTOP). In bottom‐gate (BG) OFETs offering a relatively simple fabrication process, the CYTOP coating causes a serious problem; that is, thin film formation of organic semiconducting polymers generally fails due to the lyophobic properties of CYTOP. This problem is solved by patterning the CYTOP coating layer with suitable designs. Here, a simple photo‐patterning method is established using CYTOP terminated with amidosilyl functional groups. This method is composed of self‐limited thinning process of CYTOP coating layers, exposure to vacuum ultraviolet light through a photomask, and development. BG/top‐contact OFET arrays are fabricated using poly(2,5‐bis(3‐hexadecylthiophene‐2‐yl)thieno[3,2‐b]thiophene) as the semiconducting polymer. The initial electrical properties and bias‐stress resistance are compared with those of OFETs with octadecyltrichlorosilane (ODTS)‐treated gate dielectrics. The CYTOP‐ and ODTS‐OFETs show approximately the same initial electrical properties with very small device‐to‐device variation, while the CYTOP‐OFETs exhibit much higher intrinsic bias‐stress resistance. Therefore, the spin‐coating combined with the simple photo‐patterning method is a promising technique that can form polymeric organic semiconductor layers on CYTOP layers and produce BG OFETs exhibiting very high operational stability.
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Cytop 含氟聚合物栅极电介质上具有有机场效应晶体管的稳定互补逆变器
DOI：
--
发表时间：
2009
期刊：
影响因子：
--
作者：
M. Walser;W. Kalb;T. Mathis;T. Brenner;B. Batlogg
通讯作者：
B. Batlogg
影响因子：
4
作者：
M. Debucquoy;S. Verlaak;S. Steudel;K. Myny;Jan Genoe;P. Heremans
通讯作者：
M. Debucquoy;S. Verlaak;S. Steudel;K. Myny;Jan Genoe;P. Heremans
影响因子：
2.3
作者：
Horii, Yoshinori;Sakaguchi, Koichi;Konishi, Hisatoshi
通讯作者：
Konishi, Hisatoshi
影响因子：
3.2
作者：
Se Hyun Kim;Sooji Nam;Jaeyoung Jang;K. Hong;Chanwoo Yang;D. Chung;Chan Eon Park;Woon-Seop Choi
通讯作者：
Se Hyun Kim;Sooji Nam;Jaeyoung Jang;K. Hong;Chanwoo Yang;D. Chung;Chan Eon Park;Woon-Seop Choi
影响因子：
64.8
作者：
Wang, Sihong;Xu, Jie;Bao, Zhenan
通讯作者：
Bao, Zhenan