Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition
Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition
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金属有机化学气相沉积 La 掺杂 HfO2 栅极电介质的制备和表征
DOI：
10.1016/j.apsusc.2009.10.094
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发表时间：
2010-02
影响因子：
6.7
通讯作者：
Wu, Di
中科院分区：
文献类型：
--
作者：
Huang, Liu-Ying;Li, Ai-Dong;Zhang, Wen-Qi;Li, Hui;Xia, Yi-Dong;Wu, Di
用La(Acac)3和Hf(Acac)4(acac=2，4-戊二酸酯)混合源，采用低压金属-有机化学气相沉积(MOCVD)方法在硅衬底上制备了La掺杂HfO2栅介质膜。研究了La掺杂HfO2薄膜的结构、热稳定性和电学性质。电感耦合等离子体分析证实，薄膜中的La含量在1-5mol%之间。在镀铂硅和熔融石英衬底上制备的La掺杂HfO2薄膜在1 MHz处的本征介电常数为∼28，禁带宽度为5.6 eV，薄膜的热稳定性提高到750C，表面粗糙度为0.5 nm，热稳定性提高到750C。X射线光电子能谱分析表明，界面层为Hf基硅酸盐。当Vg=1V+VfB时，当漏电流密度达到3A/cm2时，等效氧化层厚度(EOT)在1.2 nm左右得到了可靠的值。MOCVD制备的La掺杂HfO2是一种潜在的用于下一代金属氧化物半导体场效应晶体管的高k栅介质膜。
La-doped HfO2gate dielectric thin films have been deposited on Si substrates using La(acac)3and Hf(acac)4(acac=2,4-pentanedionate) mixing sources by low-pressure metal-organic chemical vapor deposition (MOCVD). The structure, thermal stability, and electrical properties of La-doped HfO2films have been investigated. Inductive coupled plasma analyses confirm that the La content ranging from 1 to 5mol% is involved in the films. The films show smaller roughness of ∼0.5nm and improved thermal stability up to 750°C. The La-doped HfO2films on Pt-coated Si and fused quartz substrates have an intrinsic dielectric constant of ∼28 at 1MHz and a band gap of 5.6eV, respectively. X-ray photoelectron spectroscopy analyses reveal that the interfacial layer is Hf-based silicate. The reliable value of equivalent oxide thickness (EOT) around 1.2nm has been obtained, but with a large leakage current density of 3A/cm2at Vg=1V+Vfb. MOCVD-derived La-doped HfO2is demonstrated to be a potential high-k gate dielectric film for next generation metal oxide semiconductor field effect transistor applications.
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影响因子：
3.2
作者：
Y. F. Loo;Stephen Taylor;R. Murray;A. C. Jones;P. Chalker
通讯作者：
Y. F. Loo;Stephen Taylor;R. Murray;A. C. Jones;P. Chalker
影响因子：
--
作者：
Q. Shao;Aidong Li;Wen-Qi Zhang;Di Wu;Zhi-guo Liu;N. Ming
通讯作者：
Q. Shao;Aidong Li;Wen-Qi Zhang;Di Wu;Zhi-guo Liu;N. Ming
影响因子：
3.2
作者：
Peacock, PW;Robertson, J
通讯作者：
Robertson, J
影响因子：
3.2
作者：
Z. Rittersma;J. Hooker;G. Vellianitis;J. Locquet;C. Marchiori;M. Sousa;J. Fompeyrine;L. Pantisano;W. Deweerd;T. Schram;M. Rosmeulen;S. Gendt;A. Dimoulas
通讯作者：
Z. Rittersma;J. Hooker;G. Vellianitis;J. Locquet;C. Marchiori;M. Sousa;J. Fompeyrine;L. Pantisano;W. Deweerd;T. Schram;M. Rosmeulen;S. Gendt;A. Dimoulas
影响因子：
3.1
作者：
Yang, KJ;Hu, CM
通讯作者：
Hu, CM