Czochralski Crystal Growth: Turbulent Flow Simulation and Reduction of Inhomogeneities

直拉晶体生长：湍流模拟和减少不均匀性

• 批准号: 8611164
• 负责人: John Lumley
• 金额: --
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-02-01 至 1991-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8611164&HistoricalAwards=false
• 关键词: Czochralski; Crystal; Growth; Turbulent; Flow

Czochralski crystal growth technique is used in the growth of large, single crystals of pure silicon for semiconductor applications. As the size of the crystal grown increases ( 5 in) the turbulence aspects assume importance. Industry has problems growing large single crystals of pure silicon partially because of this. The PI is a very competent researcher in the area of fluid mechanics in general and turbulence in particular. AT and T Laboratories has a fully instrumented czochralski crystal growth apparatus and has expressed strong interest to interact with the PI. The project with this combination is truly interdisciplinary. It has the potential to address more of the problems associated with the growth of large crytals of pure materials of interest to industry. A grant for three years is recommended.

Czochralski晶体生长技术用于生长用于半导体应用的纯硅的大单晶。随着晶体尺寸的增大（5英寸），湍流方面变得重要起来。工业在生产大型纯硅单晶时遇到困难，部分原因就是这个。在流体力学领域，特别是湍流领域，PI是一位非常有能力的研究者。AT和T实验室有一个完全仪器化的奇克拉尔斯基晶体生长装置，并表达了与PI相互作用的强烈兴趣。这种结合的项目是真正的跨学科。它有潜力解决更多与工业感兴趣的纯材料的大晶体生长有关的问题。建议拨款三年。