Czochralski Crystal Growth: Turbulent Flow Simulation and Reduction of Inhomogeneities

点击翻译按钮获取中文摘要

Czochralski crystal growth technique is used in the growth of large, single crystals of pure silicon for semiconductor applications. As the size of the crystal grown increases ( 5 in) the turbulence aspects assume importance. Industry has problems growing large single crystals of pure silicon partially because of this. The PI is a very competent researcher in the area of fluid mechanics in general and turbulence in particular. AT and T Laboratories has a fully instrumented czochralski crystal growth apparatus and has expressed strong interest to interact with the PI. The project with this combination is truly interdisciplinary. It has the potential to address more of the problems associated with the growth of large crytals of pure materials of interest to industry. A grant for three years is recommended.