Ionized Cluster Beam III-V Microelectronics Films

本提案是为响应ECSE关于日本工程研究资助机会的公告而提交的。第一年的研究将在日本京都大学进行，第二年将在迈阿密大学进行。利用离子化簇束（ICB）沉积方法研究用于砷化镓集成电路技术的薄膜。ICB研究是由京都大学的研究人员发起的，其基础是在高真空环境中在衬底上产生、电离和加速原子团簇。拟议研究的目标是评估有关ICB的主张，获得该技术的第一手工作知识，在专门制备的Si衬底上开发ICB外延GaAs薄膜，并开发用于GaAs技术的单晶互连薄膜。其他目标是与日本研究人员建立长期合作关系，并在迈阿密大学建立ICB研究。

This proposal was submitted in response to the ECSE announcement of Grant Opportunities for Engineering Research in Japan. The first year of research is to be performed in Japan at Kyoto University and the second, at the University of Miami. Studies will be conducted on thin films for GaAs integrated circuit technology using the ionized Cluster Beam (ICB) deposition method. ICB research was initiated by researchers at Kyoto University and is based upon producing, ionizing, and accelerating atom clusters onto a substrate in a high vacuum environment. The objectives of the proposed research are to evaluate the claims about ICB, to obtain a first hand working knowledge of the technique, to develop ICB epitaxial GaAs films on specially prepared Si substrates and to develop single crystal interconnect films for GaAs technology. Additional objectives are to establish long term cooperation with Japanese researchers and establish ICB research at the University of Miami.