Ionized Cluster Beam III-V Microelectronics Films

电离簇束 III-V 族微电子薄膜

• 批准号: 8615814
• 负责人: Frank Urban
• 金额: $ 15.23万
• 依托单位: University of Miami
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-12-15 至 1990-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8615814&HistoricalAwards=false
• 关键词: Ionized; Cluster; Beam; III; Microelectronics

This proposal was submitted in response to the ECSE announcement of Grant Opportunities for Engineering Research in Japan. The first year of research is to be performed in Japan at Kyoto University and the second, at the University of Miami. Studies will be conducted on thin films for GaAs integrated circuit technology using the ionized Cluster Beam (ICB) deposition method. ICB research was initiated by researchers at Kyoto University and is based upon producing, ionizing, and accelerating atom clusters onto a substrate in a high vacuum environment. The objectives of the proposed research are to evaluate the claims about ICB, to obtain a first hand working knowledge of the technique, to develop ICB epitaxial GaAs films on specially prepared Si substrates and to develop single crystal interconnect films for GaAs technology. Additional objectives are to establish long term cooperation with Japanese researchers and establish ICB research at the University of Miami.

该提案是针对ECSE宣布 提供在日本进行工程研究的机会。 第一年 研究将在日本的京都大学进行， 第二，在迈阿密大学。 研究将在薄进行 用电离团簇的砷化镓集成电路工艺用薄膜 束（ICB）沉积方法。 ICB的研究是由 研究人员在京都大学，并基于生产，电离， 并在高真空中将原子团簇加速到衬底上 环境 拟议研究的目标是评估 关于ICB的声明，以获得第一手的工作知识， 技术，在特殊制备的Si上开发ICB外延GaAs薄膜 衬底和开发用于GaAs的单晶互连膜 技术. 其他目标是建立长期 与日本研究人员合作，并在 迈阿密大学。