Ionized Cluster Beam III-V Microelectronics Films

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This proposal was submitted in response to the ECSE announcement of Grant Opportunities for Engineering Research in Japan. The first year of research is to be performed in Japan at Kyoto University and the second, at the University of Miami. Studies will be conducted on thin films for GaAs integrated circuit technology using the ionized Cluster Beam (ICB) deposition method. ICB research was initiated by researchers at Kyoto University and is based upon producing, ionizing, and accelerating atom clusters onto a substrate in a high vacuum environment. The objectives of the proposed research are to evaluate the claims about ICB, to obtain a first hand working knowledge of the technique, to develop ICB epitaxial GaAs films on specially prepared Si substrates and to develop single crystal interconnect films for GaAs technology. Additional objectives are to establish long term cooperation with Japanese researchers and establish ICB research at the University of Miami.