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Experimental and Theoretical Studies of Ultrathin Overlayerson Semiconductor Surfaces

Experimental and Theoretical Studies of Ultrathin Overlayerson Semiconductor Surfaces
半导体表面超薄覆盖层的实验和理论研究
批准号:
8718101
负责人:
Ignatius Tsong
金额:
$28.56万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1988
资助国家:
美国
项目状态:
已结题
起止时间:
1988-11-15 至 1992-07-31

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中文摘要
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英文摘要
The objective of the investigation is to systematically study the structure of surfaces of semiconductor materials. The program will emphasize impact collision ion scattering spectroscopy, scanning tunneling microscopy, and first principles pseudopotential total energy theoretical calculations. Impact collision ion scattering spectroscopy identifies the atomic species on the surface and provides structural information on the crystallographic unit cell of the surface atoms. The scanning tunneling microscopy provides an image of the surface on a localized atomic scale in three-dimensional scale. Total energy calculations give detailed information pertaining to the equilibrium atomic and electronic structures. The research is relevant to the surface of semiconducting materials used in integrated electronics, especially to the important topic of metallization.
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Gallium Nitride Quantum-Dot Light-Emitting Diodes
  • 批准号:
    0438400
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $60.0万
  • 财政年份:
    2006
  • 负责人:
    Ignatius Tsong
  • 依托单位:
Properties of the Pseudo-Binary Wide Band Gap Semiconductor Silicon Carbide-Aluminum Nitride
  • 批准号:
    0303237
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $33.63万
  • 财政年份:
    2003
  • 负责人:
    Ignatius Tsong
  • 依托单位:
Tailoring Surface Morphology in Group III Nitride Heteroepitaxy
  • 批准号:
    9986271
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.68万
  • 财政年份:
    2000
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    Ignatius Tsong
  • 依托单位:
U.S.-Japan Joint Seminar: Mesoscopic Phenomena on Surfaces
  • 批准号:
    9909756
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.44万
  • 财政年份:
    2000
  • 负责人:
    Ignatius Tsong
  • 依托单位:
海外基金