Experimental and Theoretical Studies of Ultrathin Overlayerson Semiconductor Surfaces

本研究的目的是系统地研究半导体材料的表面结构。该计划将强调碰撞离子散射谱、扫描隧道显微镜和第一原理赝势总能量的理论计算。碰撞离子散射光谱识别表面上的原子物种，并提供关于表面原子的晶胞的结构信息。扫描隧道显微镜提供了三维尺度的局域原子尺度的表面图像。总能量计算提供了与平衡原子和电子结构有关的详细信息。这项研究涉及集成电路中半导体材料的表面，特别是金属化这一重要课题。

The objective of the investigation is to systematically study the structure of surfaces of semiconductor materials. The program will emphasize impact collision ion scattering spectroscopy, scanning tunneling microscopy, and first principles pseudopotential total energy theoretical calculations. Impact collision ion scattering spectroscopy identifies the atomic species on the surface and provides structural information on the crystallographic unit cell of the surface atoms. The scanning tunneling microscopy provides an image of the surface on a localized atomic scale in three-dimensional scale. Total energy calculations give detailed information pertaining to the equilibrium atomic and electronic structures. The research is relevant to the surface of semiconducting materials used in integrated electronics, especially to the important topic of metallization.