课题基金 / 基金详情

Gallium Nitride Quantum-Dot Light-Emitting Diodes

Gallium Nitride Quantum-Dot Light-Emitting Diodes
氮化镓量子点发光二极管
批准号:
0438400
负责人:
Ignatius Tsong
金额:
$60.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-02-15 至 2009-03-31

项目摘要

项目成果

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中文摘要
翻译
[04:38 . 400]该奖项授予亚利桑那州立大学,用于支持以下活动24个月。该提案是根据创新伙伴关系项目招标(NSF-04556)提交的。合作伙伴包括亚利桑那州立大学(领导机构)、桑迪亚国家实验室和Nitronex公司(一家小企业)。该提案的主要目标是基于量子点的III族氮化物宽带隙半导体的发光二极管的研究,技术转让和商业化。亚利桑那州立大学将在硅衬底上生产锆硼,其晶格与氮化镓发光二极管相匹配。基片在紫外光谱中具有很强的反射性,克服了吸收,使激光效率高。Nitronex将在衬底上生长应力消除的氮化铝镓过渡层,以防止运行中的热开裂。亚利桑那州立大学随后将培育砷化镓量子点,这是发光二极管的光学活性介质。桑迪亚将增加封盖层和包装元件。桑迪亚国家实验室还将测量这些设备的光输出效率。Nitronex将把这些产品商业化。潜在的经济影响提议的创新将创造高能效、更持久、成本效益高的照明系统,这将大大有助于减少能源消耗。进一步的可持续创新包括通过荧光粉转换的白光发光二极管,以及用于改进光通信和数据存储的激光系统。这将为美国照明行业带来数十亿美元的商机。该项目的智力价值在于利用三个合作伙伴各自的独特能力来发展和表征这种新型发光二极管。新材料将比传统的III族氮化物宽带隙发光二极管具有更高的亮度和发光效率,并且由于发射线宽度更窄,颜色专用性将远远优于传统的III族氮化物宽带隙发光二极管。该活动的更广泛影响集中在扩展技术,以开发新一代发光二极管,将满足低成本和高发光效率的标准,用于一般照明,以及改进的光学和数据存储。学生亦会接触到有关创业的课程和实践经验,即亲身体验如何将知识转化为产品,从而创造新财富,并透过降低能源消耗来提高生活质素。
英文摘要
0438400TsongThis award is to Arizona State University to support the activity described below for 24 months. The proposal was submitted in response to the Partnerships for Innovation Program Solicitation (NSF-04556).PartnersThe partners include Arizona State University (Lead Institution), Sandia National Laboratories, and Nitronex Corporation (a small business).The primary objective of the proposal is research, technology transfer, and commercialization of light-emitting diodes based on group III nitride wide band-gap semiconductors based on quantum dots. Arizona State University will produce the zirconium-boron on silicon substrates, which are lattice-matched to the gallium nitride light-emitting diodes. The substrates are highly reflective in the ultraviolet spectrum, which overcomes the absorption and makes the laser efficient. Nitronex will grow the stress-relieving aluminum gallium nitride transition layers on the substrate to prevent thermal cracking in operation. Arizona State University will then grow the quantum dots of gallium arsenide, which are the optically active medium for the light-emitting diode. Sandia will grow the capping layer and the packaging elements. Sandia will also measure the efficiency of the light output of the devices. Nitronex will commercialize the products.Potential Economic ImpactThe proposed innovations will create highly energy-efficient, longer-lasting, and cost-effective lighting systems that will contribute significantly to the reduction of energy consumption. Further sustainable innovations include white light-emitting diodes through phosphor conversion, and laser systems for improved optical communications and data storage. This will open business opportunities in the multi-billion dollar range for the US lighting industry.The intellectual merit of the project is the growth and characterization of this new class of light-emitting diodes using the unique capabilities of each of the three partners. The new materials will have higher brightness and luminous efficiency than the conventional group III nitride wide band-gap light-emitting diodes, and the color specificity will be far superior because of the narrower emission line-width.The broader impacts of the activity concentrate on expanding the techniques to develop a new generation of light-emitting diodes will fulfill the criteria of both low cost and high luminous efficiency for applications in general illumination, as well as improved optical and data storage. The students will also be exposed to course and practical experience in entrepreneurship, i.e., first-hand experience in transforming knowledge into products that create new wealth and enhance the quality of life by reducing energy consumption.
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Properties of the Pseudo-Binary Wide Band Gap Semiconductor Silicon Carbide-Aluminum Nitride
  • 批准号:
    0303237
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $33.63万
  • 财政年份:
    2003
  • 负责人:
    Ignatius Tsong
  • 依托单位:
Tailoring Surface Morphology in Group III Nitride Heteroepitaxy
  • 批准号:
    9986271
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.68万
  • 财政年份:
    2000
  • 负责人:
    Ignatius Tsong
  • 依托单位:
U.S.-Japan Joint Seminar: Mesoscopic Phenomena on Surfaces
  • 批准号:
    9909756
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.44万
  • 财政年份:
    2000
  • 负责人:
    Ignatius Tsong
  • 依托单位:
NSF-CGP Fellowship: An In situ Scanning Tunneling Micro- scopy Study of Group III Nitride Thin Films
  • 批准号:
    9602468
  • 项目类别:
    Standard Grant
  • 资助金额:
    $12.99万
  • 财政年份:
    1997
  • 负责人:
    Ignatius Tsong
  • 依托单位:
国内基金
海外基金
基于稀氮砷化镓(Dilute nitride GaNAs)的近红外自旋放大纳米线激光器的研究
  • 批准号:
    61905071
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    24.0万元
  • 批准年份:
    2019
  • 负责人:
    陈舒拉
  • 依托单位: