Tailoring Surface Morphology in Group III Nitride Heteroepitaxy

III 族氮化物异质外延中表面形貌的定制

• 批准号: 9986271
• 负责人: Ignatius Tsong
• 金额: $ 30.68万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-02-01 至 2004-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9986271&HistoricalAwards=false
• 关键词: Tailoring; Surface; Morphology; Group; III

This project aims to encompass the complete cycle of film growth of GaN, from substrate preparation through growth of buffer layers and nitride epilayers to deposition of metal contact layers. The primary objective is to achieve consistent growth of smooth two-dimensional basal-plane oriented layers of Group III nitrides by MBE using direct feedback provided by in-situ microscopic observations, and to tailor, optimize, and control the surface morphology during growth. A combination of ultrahigh vacuum (UHV) microscopies: low-energy electron microscopy (LEEM), scanning tunneling microscope (STM), and atomic force microscopy (AFM) will be used to conduct in situ deposition and growth studies of Group III nitrides on 6H-SiC(0001) substrates. SiC is chosen as the substrate over sapphire because of its semiconducting nature offering topside and backside contacts, which is not only more convenient for our proposed in situ microscopy studies but also for device applications. Through greater understanding of the growth process, more viable guidelines to the consistent growth of smooth two-dimensional basal-plane oriented layers of Group III nitrides by MBE will be established.%%%The project addresses basic research issues in a topical area of materials science with high technological relevance. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the perform-ance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area.***

该项目旨在涵盖GaN薄膜生长的完整周期，从衬底制备到缓冲层和氮化物外延层的生长，再到金属接触层的沉积。主要目的是实现一致的生长的平滑的二维基面取向层的第III族氮化物MBE使用直接反馈提供的原位显微镜观察，并定制，优化和控制生长过程中的表面形态。结合超真空（UHV）显微镜：低能电子显微镜（LEEM），扫描隧道显微镜（STM）和原子力显微镜（AFM）将被用来进行原位沉积和生长的第三族氮化物在6 H-SiC（0001）衬底的研究。选择SiC作为蓝宝石上的衬底是因为其半导体性质提供顶侧和背侧接触，这不仅更方便我们提出的原位显微镜研究，而且也为设备应用。通过对生长过程的更深入了解，将建立更可行的指导方针，以通过分子束外延连续生长第三族氮化物的平滑二维基面取向层。该项目涉及材料科学专题领域的基础研究问题，具有高度的技术相关性。现在已有实验工具，可以在原子水平上观察基本表面过程，如果能更好地了解这些过程，就可以在基础科学和技术方面取得进展。从研究中获得的基本知识和理解，预计将有助于提高先进器件和电路的性能和稳定性，为设计和生产改进的材料和材料组合提供基本的理解和基础。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。