Structures of Surfaces and Interfaces of Metal/SemiconductorSystems

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Fundamental research directed toward improved understanding at the atomic level of interatomic bonding, electronic states of surfaces/interfaces, and epitaxial crystal growth will be conducted. The PI is a recognized expert in surface science, and is employing a unique combination of surface science analytical techniques, time-of-flight impact-collision ion-scattering spectrometry(TOF ICISS), ballistic electron emission microscopy(BEEM), and scanning tunneling microscopy(STM) to study the properties and behavior of metals(indium, tin, and lead) deposited on silicon. This material combination was chosen for the study because little or no metal diffuses into the substrate, the interface is sharp, and the surface reconstructions which occur as a consequence of metal deposition on the surface are well-ordered with small defect concentrations. %%% This research is expected to provide deeper fundamental understanding of atomic interactions and their relationship to epitaxial crystal growth. From an application point of view, understanding these properties is helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.