Structures of Surfaces and Interfaces of Metal/SemiconductorSystems

金属/半导体系统的表面和界面结构

• 批准号: 9116505
• 负责人: Ignatius Tsong
• 金额: $ 26.04万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-03-01 至 1995-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9116505&HistoricalAwards=false
• 关键词: Structures; Surfaces; Interfaces; Metal; SemiconductorSystems

Fundamental research directed toward improved understanding at the atomic level of interatomic bonding, electronic states of surfaces/interfaces, and epitaxial crystal growth will be conducted. The PI is a recognized expert in surface science, and is employing a unique combination of surface science analytical techniques, time-of-flight impact-collision ion-scattering spectrometry(TOF ICISS), ballistic electron emission microscopy(BEEM), and scanning tunneling microscopy(STM) to study the properties and behavior of metals(indium, tin, and lead) deposited on silicon. This material combination was chosen for the study because little or no metal diffuses into the substrate, the interface is sharp, and the surface reconstructions which occur as a consequence of metal deposition on the surface are well-ordered with small defect concentrations. %%% This research is expected to provide deeper fundamental understanding of atomic interactions and their relationship to epitaxial crystal growth. From an application point of view, understanding these properties is helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.

基础研究旨在提高对 原子间键合的原子水平， 表面/界面，外延晶体生长将是 进行。 PI是公认的表面科学专家， 采用了独特的表面科学分析 飞行时间碰撞离子散射技术 弹道电子发射光谱法（TOF ICISS） 扫描隧道显微镜（STM），以研究 金属（铟、锡和铅）的性质和行为 沉积在硅上。 选择这种材料组合是为了 由于很少或没有金属扩散到衬底中， 界面是尖锐的，表面重建发生， 表面上金属沉积的结果是有序的 具有小的缺陷浓度。 %%% 这项研究有望提供更深入的基础知识。 理解原子相互作用及其与 外延晶体生长 从应用的角度来看， 了解这些性质有助于半导体器件的研究 设计和制造。 结果将是重要的， 大规模、高速集成化技术的通用途径 电子电路