Mathematical Sciences: Analytical and Numerical Studies of Partial Differential Equations of Semiconductor Devices

数学科学：半导体器件偏微分方程的分析和数值研究

• 批准号: 8805539
• 负责人: Julian Cole
• 金额: $ 12万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-07-15 至 1991-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8805539&HistoricalAwards=false
• 关键词: Mathematical; Sciences; Analytical; Numerical; Studies

This project is concerned with problem formulation, analysis, and large scale computation in semi-conductor device design. The classical drift-diffusion equations will be reviewed and more realistic boundary conditions derived. Computation methods for steady and unsteady cases will be developed. Both MOSFET and Bipolar devices will be considered. New physical models appropriate for smaller devices will be developed, especially those based on a Boltzmann equation formulation. Suitable boundary conditions and computational methods will be derived.

这个项目涉及问题的表述， 半导体器件分析和大规模计算 设计 经典的漂移扩散方程将被回顾 更真实的边界条件。 计算 定常和非定常情况下的方法将被开发。 两 将考虑MOSFET和双极器件。 新的物理 将开发适合于较小设备的模型， 尤其是基于玻尔兹曼方程公式的那些。 适当的边界条件和计算方法将 推导