Engineering Research Equipment Grant: Suss MJB 3 UV 300 High Performance Aligner

我们要求的设备将有助于我们评估 加工的半导体材料。 一种高性能掩模对准器， 要求支持研究微波等离子体蚀刻亚 微米结构和氧化物的微波等离子体薄膜沉积 和钻石。 校准器是必要的，使我们的微波蚀刻 工作进行到亚微米特征尺寸制度。

The equipment that we are requesting will aid us in evaluation of processed semiconductor material. A high performance mask-aligner is requested to support research in microwave plasma etching of sub- micron structures and microwave plasma thin-film deposition of oxides and diamond. The aligner is necessary to allow our microwave etching work to proceed into the sub-micron feature size regime.