Microwave Plasma Processing for VLSI Technology

本研究的重点是微波放电的应用， 集成电路的等离子体处理。 这些实验利用了 一种新的微波放电反应器叫做微波等离子体盘 反应器 反应器可以在10托以上至10托以下的压力下运行， 在任何气体中的压力小于10; 1-; 13托，由盘形微波组成， 在可调谐圆柱形微波腔内放电， 适应各种不同的实验条件。 研究 包括三个主要任务：等离子体反应器表征; 微波等离子体氧化实验和微波等离子体刻蚀 实验 虽然每个实验系统所采用的 这些都是相似的，调查利用三个独立的 实验装置：一个装置来表征微波等离子体， 单独的实验系统来研究氧化， 研究微波等离子体刻蚀的新装置。

This research focuses on the application of microwave discharges to plasma processing of integrated circuits. The experiments make use of a new microwave discharge reactor called a microwave plasma disk reactor. The reactor, which can be operated from above 10 Torr to less than 10;i-;i3 Torr in any gas, consists of a disk-shaped microwave discharge inside a tuneable cylindrical microwave cavity and is adaptable to many different experimental conditions. The research consists of three major tasks: plasma reactor characterization; microwave plasma oxidation experiments; and microwave plasma etching experiments. Although the experimental systems employed for each of these are to be similar, the investigation makes use of three separate experimental setups: one setup to characterize the microwave plasma, a separate experimental system to investigate oxidation, and an entirely new setup to investigate microwave plasma etching.