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The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India

The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India
半导体器件物理,第五届国际研讨会,1989 年 12 月 10-15 日,印度新德里
批准号:
8912128
负责人:
Joseph Loferski
金额:
$3.54万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1989
资助国家:
美国
项目状态:
已结题
起止时间:
1989-09-01 至 1990-08-31

项目摘要

项目成果

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中文摘要
翻译
描述:本项目支持12名 美国科学家在第五届国际研讨会上 将在新德里举行的半导体器件物理会议, 印度,1989年12月10日至15日。 印度组织者是 S教授C. Jain,Solid State的退休董事 新德里国防部物理实验室, S博士Radhakrishna,印度研究所的 科技,马德拉斯。 会议/讲习班,以及 案例,将处理集成 电路,超大规模集成电路,亚微米技术,MOS,双极器件, 太阳能电池、大功率整流器、发光二极管 和类似的装置。 报告将讨论以下方面的事态发展: 设计、制造和使用此类器械。 预计 大约300人将参加,其中包括大约 60名来自西欧、美国、日本、韩国、韩国、日本、韩国等国家。 加拿大、澳大利亚、日本、苏联和东欧, 以及来自发展中国家的科学家, 东亚 范围:PI一直是美国的项目总监。 出席过去四次会议中的三次会议的代表团, 印度科学家,贾恩博士一直是所有的主席, 两会 这些诉讼涉及 会议上提出的重要文件。 这 讲习班很可能会非常成功和富有成效, 会议记录应该增加科学文献 在这一重要领域。 增加合作研究是 很可能导致两国之间的这种 重要领域。
英文摘要
Description: This project supports participation by twelve U.S. scientists in the Fifth International Workshop on the Physics of Semiconductor Devices, to be held in New Delhi, India, December 10-15, 1989. The Indian organizers are Professor S. C. Jain, retired director of the Solid State Physics Laboratory in the Department of Defense, New Delhi, and Dr. S. Radhakrishna, of the Indian Institute of Technology, Madras. The conference/workshop, as was the case in the earlier four workshops, will deal with itegrated circuits, VLSI, submicron technology, MOS, bipolar devices, solar cells, high power rectifiers, light emitting diodes and similar devices. It will deal with developments in design, manufacture and use of such devices. It is expected that approximately 300 persons will attend including about 60 from foreign countries including Western Europe, the U.S. and Canada, Australia, Japan, the USSR and Eastern Europe, as well as scientists from developing countries in South and East Asia. Scope: The PI has been the project director for the U.S. delegations to three of the past four conferences, and the Indian scientists, Dr. Jain has been the chairman of all the conferences. These have resulted in proceedings covering the important papers presented at the meetings. This workshop is likely to be quite successful and productive, and the proceedings should add to the scientific literature in this important area. Increased cooperative research is very likely to result between the two countries in this important area.
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会议论文
Seventh International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 14 to 18, 1993, Support of U.S. Participants
  • 批准号:
    9312242
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1993
  • 负责人:
    Joseph Loferski
  • 依托单位:
Industry-University Cooperative Research Center for Thin Film and Interface Research (CTFIR)
  • 批准号:
    8813548
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.3万
  • 财政年份:
    1989
  • 负责人:
    Joseph Loferski
  • 依托单位:
Planning Conference for an I/UCR Center for Thin Films and Interfaces
  • 批准号:
    8715920
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    1987
  • 负责人:
    Joseph Loferski
  • 依托单位:
Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies
  • 批准号:
    8714933
  • 项目类别:
    Standard Grant
  • 资助金额:
    $3.55万
  • 财政年份:
    1987
  • 负责人:
    Joseph Loferski
  • 依托单位:
海外基金