The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India

半导体器件物理，第五届国际研讨会，1989 年 12 月 10-15 日，印度新德里

• 批准号: 8912128
• 负责人: Joseph Loferski
• 金额: $ 3.54万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1990-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8912128&HistoricalAwards=false
• 关键词: Physics; Semiconductor; Devices; Fifth; International

Description: This project supports participation by twelve U.S. scientists in the Fifth International Workshop on the Physics of Semiconductor Devices, to be held in New Delhi, India, December 10-15, 1989. The Indian organizers are Professor S. C. Jain, retired director of the Solid State Physics Laboratory in the Department of Defense, New Delhi, and Dr. S. Radhakrishna, of the Indian Institute of Technology, Madras. The conference/workshop, as was the case in the earlier four workshops, will deal with itegrated circuits, VLSI, submicron technology, MOS, bipolar devices, solar cells, high power rectifiers, light emitting diodes and similar devices. It will deal with developments in design, manufacture and use of such devices. It is expected that approximately 300 persons will attend including about 60 from foreign countries including Western Europe, the U.S. and Canada, Australia, Japan, the USSR and Eastern Europe, as well as scientists from developing countries in South and East Asia. Scope: The PI has been the project director for the U.S. delegations to three of the past four conferences, and the Indian scientists, Dr. Jain has been the chairman of all the conferences. These have resulted in proceedings covering the important papers presented at the meetings. This workshop is likely to be quite successful and productive, and the proceedings should add to the scientific literature in this important area. Increased cooperative research is very likely to result between the two countries in this important area.

描述：该项目支持 12 名美国科学家参加将于 1989 年 12 月 10 日至 15 日在印度新德里举行的第五届半导体器件物理国际研讨会。印度组织者是新德里国防部固体物理实验室退休主任 S. C. Jain 教授和马德拉斯印度理工学院的 S. Radhakrishna 博士。 与之前的四场研讨会一样，这次会议/研讨会将讨论集成电路、VLSI、亚微米技术、MOS、双极器件、太阳能电池、高功率整流器、发光二极管和类似器件。 它将涉及此类设备的设计、制造和使用的发展。 预计参会人员约300人，其中西欧、美加、澳大利亚、日本、苏联、东欧等国外以及南亚、东亚发展中国家科学家约60人。 范围：在过去四次会议中，PI 担任美国代表团的项目总监，印度科学家 Jain 博士担任所有会议的主席。 这些导致会议记录涵盖了会议上提出的重要文件。 这次研讨会可能会非常成功和富有成效，会议记录应该会增加这一重要领域的科学文献。 两国很可能在这一重要领域加强合作研究。