The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India

半导体器件物理，第五届国际研讨会，1989 年 12 月 10-15 日，印度新德里

• 批准号: 8912128
• 负责人: Joseph Loferski
• 金额: $ 3.54万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1990-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8912128&HistoricalAwards=false
• 关键词: Physics; Semiconductor; Devices; Fifth; International

Description: This project supports participation by twelve U.S. scientists in the Fifth International Workshop on the Physics of Semiconductor Devices, to be held in New Delhi, India, December 10-15, 1989. The Indian organizers are Professor S. C. Jain, retired director of the Solid State Physics Laboratory in the Department of Defense, New Delhi, and Dr. S. Radhakrishna, of the Indian Institute of Technology, Madras. The conference/workshop, as was the case in the earlier four workshops, will deal with itegrated circuits, VLSI, submicron technology, MOS, bipolar devices, solar cells, high power rectifiers, light emitting diodes and similar devices. It will deal with developments in design, manufacture and use of such devices. It is expected that approximately 300 persons will attend including about 60 from foreign countries including Western Europe, the U.S. and Canada, Australia, Japan, the USSR and Eastern Europe, as well as scientists from developing countries in South and East Asia. Scope: The PI has been the project director for the U.S. delegations to three of the past four conferences, and the Indian scientists, Dr. Jain has been the chairman of all the conferences. These have resulted in proceedings covering the important papers presented at the meetings. This workshop is likely to be quite successful and productive, and the proceedings should add to the scientific literature in this important area. Increased cooperative research is very likely to result between the two countries in this important area.

描述：该项目支持十二位美国科学家参加第五届国际半导体设备物理研讨会，将于1989年12月10日至15日在印度新德里举行。印度组织者是S. C. Jain教授，New Delhi和S. radhakrishna Instistitute nestute nestionds new Delhi和S. Radhakrish Instist的固体国家物理学实验室的退休总监S. C. Jain，均为印度固体实验室。 会议/研讨会与早期的四个研讨会一样，将处理迭代电路，VLSI，亚微米技术，MOS，双极设备，太阳能电池，高功率整流器，发光二极管和类似设备。 它将处理此类设备的设计，制造和使用开发。 预计将大约有300人参加，其中包括西欧，美国和加拿大，澳大利亚，日本，苏联和东欧，以及来自南亚和东亚发展中国家的科学家，包括大约60人。 范围：PI曾担任过去四个会议中三场的美国代表团项目主任，印度科学家Jain博士一直是所有会议的主席。 这些导致诉讼涵盖了会议上提出的重要论文。 该研讨会可能会非常成功和富有成效，并且程序应增加该重要领域的科学文献。 在这一重要领域的两个国家之间，合作研究的增加很可能会导致。