Semiconductor Diode Laser Amplifiers for High Performance Photonic Switching Systems
Semiconductor Diode Laser Amplifiers for High Performance Photonic Switching Systems
批准号:
8818797
负责人:
Mario Dagenais
金额:
$35.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1989
资助国家:
美国
项目状态:
已结题
起止时间:
1989-04-15 至 1992-09-30
中文摘要
半导体光放大器是未来光通信和光子开关系统的重要组成部分。在这个建议中,提出了一个实验研究的潜力,同时使用法布里-佩罗和行波激光放大器扩大现有的光纤系统的带宽。特别地,本文研究了用于放大超高数据速率强度调制波长复用信号的法布里-珀罗和行波激光放大器的串扰、增益饱和、灵敏度和保真度问题。在与Harry Diamond实验室的合作中,首席研究员还建议使用45°角反射镜和聚焦离子束制造的光栅,在平面外寻址配置中制造波导并优化双稳二极管激光放大器的光耦合效率。这些技术目标补充了光子开关器件的工作,同时支持和增强了Harry Diamond实验室光电项目的类似推力。此外,他建议使用原位椭偏技术来监测商用二极管激光器表面上增透涂层的沉积。这将确保高质量行波激光放大器的可重复性制造。
英文摘要
Semiconductor optical amplifiers will be important components in future optical communication and photonic switching systems. In this proposal, an experimental study of the potential of using both Fabry- Perot and traveling-wave laser amplifiers for enlarging the bandwidth of present fiber optic systems is proposed. In particular, this is a study of the problem of crosstalk, gain saturation, sensitivity and fidelity of both Fabry-Perot and traveling-wave laser amplifiers for the amplification of ultra high data rates intensity modulated wavelength multiplexed signals. In collaboration with Harry Diamond Laboratories, the principal investigator also proposes to fabricate waveguides and to optimize the optical coupling efficiency of bistable diode laser amplifiers in an out-of-plane addressing configuration by using 45o-angle mirrors and gratings fabricated with a focused ion beam. These technical objectives complement this work on photonic switching devices and, at the same time, support and enhance similar thrusts of the Harry Diamond Laboratories optoelectronic program. In addition, he proposes to use the technique of in-situ ellipsometry for monitoring the deposition of anti-reflection coatings on the facets of a commercially available diode laser. This will ensure the reproducible making of high-quality traveling-wave laser amplifiers.
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