MRI: Acquisition of a III-Nitride MOCVD for Nanophotonics and Nanoelectronics

MRI:获取用于纳米光子学和纳米电子学的 III 族氮化物 MOCVD

基本信息

  • 批准号:
    1429468
  • 负责人:
  • 金额:
    $ 112.92万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-09-01 至 2019-08-31
  • 项目状态:
    已结题

项目摘要

This project involves the acquisition of a chemical vapor deposition system for the growth of semiconductor materials to advance the frontier of advanced photonic and electronics devices. This equipment will help to establish a new Laboratory at the University of Maryland (UMD) which will serve as a resource center for the broad community of researchers working in the field of semiconductor materials and devices. The strategic location in the National Capital Region will leverage the existing expertise at UMD and nearby institutions to provide many users and collaborators. The research enabled by this acquisition will lead to higher efficiency devices that will reduce power consumption in data centers and will ensure secure communication networks. Collaboration with nearby Norfolk State University will permit several of their professors and students to participate in the planned research. The PIs will involve students from local high schools to take part in research summer programs. Workshops will be organized in the Washington area to energize collaborations between local universities, government laboratories and local industry. The proposed work to establish a metal-organic chemical vapor deposition (MOCVD) system will serve as the center for preparation of III-nitride semiconductor materials and devices. The system will be used by researchers at UMD and nearby institutions to address many areas of nitride-based photonics and electronics devices. There will be five overlapping research thrust areas: Nitride Materials Design and Synthesis; Nitride Quantum Devices; Nitride Optical Devices; Nitride Devices for Energy Applications; and, Nitride Electronic and Sensor Devices. The acquisition will promote multidisciplinary efforts between researchers in materials science, chemical engineering, device physics and electrical engineering. The UMD research team, and their collaborators from across the US, will focus on a number of fundamental issues currently limiting the performance of nitride-based device structures, including quantum dots in nitrides for quantum information at room temperature and novel nanowire devices for solid state lighting. The MOCVD system will allow exploration of the unique properties of III-nitride materials leading to photovoltaic devices for highly-efficient solar energy collection, high power devices for smart grid applications, and efficient photonic detectors based on confined epitaxy. The PI and co-PIs have the necessary expertise required for this utilization of the MOCVD system and for the planned research activities.
该项目涉及收购用于生长半导体材料的化学气相沉积系统,以推动先进的光子和电子设备的前沿。该设备将有助于在马里兰大学(UMD)建立一个新的实验室,作为半导体材料和器件领域广大研究人员的资源中心。国家首都地区的战略位置将利用UMD和附近机构的现有专业知识,为许多用户和合作者提供服务。通过此次收购实现的研究将带来更高效率的设备,这些设备将降低数据中心的功耗,并确保通信网络的安全。与附近的诺福克州立大学的合作将允许他们的几名教授和学生参与计划中的研究。PIs将让当地高中的学生参加研究暑期项目。将在华盛顿地区组织研讨会,以促进当地大学、政府实验室和当地行业之间的合作。拟议的建立金属-有机化学气相沉积(MOCVD)系统的工作将作为制备III-氮化物半导体材料和器件的中心。该系统将被UMD和附近机构的研究人员用于解决氮化物光电子学和电子设备的许多领域。将有五个重叠的研究重点领域:氮化物材料设计和合成;氮化物量子器件;氮化物光学器件;用于能源的氮化物器件;以及氮化物电子和传感器器件。此次收购将促进材料科学、化学工程、设备物理和电气工程领域的研究人员之间的多学科努力。UMD研究团队及其来自美国各地的合作者将专注于目前限制氮化物设备结构性能的一些基本问题,包括用于室温量子信息的氮化物中的量子点,以及用于固态照明的新型纳米线设备。MOCVD系统将允许探索III-氮化物材料的独特特性,从而开发出用于高效太阳能收集的光伏器件、用于智能电网应用的大功率器件以及基于受限外延的高效光子探测器。私人投资和共同投资拥有利用MOCVD系统和计划开展的研究活动所需的必要专门知识。

项目成果

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Mario Dagenais其他文献

The role of nonlinear diode laser amplifiers in optical processors and interconnects
  • DOI:
    10.1007/bf02034351
  • 发表时间:
    1987-07-01
  • 期刊:
  • 影响因子:
    4.000
  • 作者:
    Wayne F. Sharfin;Mario Dagenais
  • 通讯作者:
    Mario Dagenais
Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas
  • DOI:
    10.1016/j.sse.2010.05.009
  • 发表时间:
    2010-10-01
  • 期刊:
  • 影响因子:
  • 作者:
    Filiz Yesilkoy;Kwangsik Choi;Mario Dagenais;Martin Peckerar
  • 通讯作者:
    Martin Peckerar
Lithography, Plasmonics and Sub-wavelength Aperture Exposure Technology
光刻、等离子体和亚波长孔径曝光技术
Optical pattern recognition by use of a segmented semiconductor optical amplifier.
使用分段半导体光放大器进行光学模式识别。
  • DOI:
    10.1364/ol.26.001248
  • 发表时间:
    2001
  • 期刊:
  • 影响因子:
    3.6
  • 作者:
    P. Petruzzi;Christopher J. K. Richardson;M. Leeuwen;N. Moulton;Peter J. S. Heim;Mario Dagenais;Julius Goldhar
  • 通讯作者:
    Julius Goldhar

Mario Dagenais的其他文献

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{{ truncateString('Mario Dagenais', 18)}}的其他基金

Collaborative Research: Toward universal quantum computing with heterogeneously integrated quantum optical frequency combs
合作研究:利用异构集成量子光学频率梳实现通用量子计算
  • 批准号:
    2219760
  • 财政年份:
    2022
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
Integrated scalable quantum receiver for energy efficient data exchange and telecommunication
用于节能数据交换和电信的集成可扩展量子接收器
  • 批准号:
    1927674
  • 财政年份:
    2019
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
EAGER: TDM solar cells: High Efficiency Perovskites and CuInSe (CIS) Tandem Solar cells
EAGER:TDM 太阳能电池:高效钙钛矿和 CuInSe (CIS) 串联太阳能电池
  • 批准号:
    1665449
  • 财政年份:
    2017
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
Workshop: Quantum Information on a Chip; October 12-14, 2015 , Universita Degli Studi di Padova, Padua, Italy,
研讨会:芯片上的量子信息;
  • 批准号:
    1543808
  • 财政年份:
    2015
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
Carrier Dynamics in Quantum Dot Solar Cells and Infrared Detectors
量子点太阳能电池和红外探测器中的载流子动力学
  • 批准号:
    1509712
  • 财政年份:
    2015
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
Travel assistance for US university professors and students to attend the PIERS conference in Guangzhou, China (August 25-28, 2014)
为美国大学教授和学生参加在中国广州举行的 PIERS 会议(2014 年 8 月 25 日至 28 日)提供交通补助
  • 批准号:
    1419479
  • 财政年份:
    2014
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
Solar Energy Scavenging Using Nano-Antennas and Tunneling Diodes
使用纳米天线和隧道二极管收集太阳能
  • 批准号:
    1029925
  • 财政年份:
    2010
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
Industry/University Cooperative Research Center for Optoelectronic Devices, Interconnects, and Packaging
光电器件、互连和封装产学合作研究中心
  • 批准号:
    9520255
  • 财政年份:
    1995
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Continuing Grant
Planning Grant for a Joint Industry/University Cooperative Center Called the Optoelectrnic Circuitry and Packaging (OCP) Center
为名为光电电路和封装(OCP)中心的工业/大学联合合作中心规划拨款
  • 批准号:
    9312427
  • 财政年份:
    1993
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Standard Grant
Semiconductor Diode Laser Amplifiers for High Performance Photonic Switching Systems
用于高性能光子开关系统的半导体二极管激光放大器
  • 批准号:
    8818797
  • 财政年份:
    1989
  • 资助金额:
    $ 112.92万
  • 项目类别:
    Continuing Grant

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