Minority Carrier Transport in Heavily Doped GaAs

重掺杂GaAs中的少数载流子输运控制着 双极器件的性能 晶体管和太阳能电池。 所谓的重掺杂效应（即， 重杂质掺杂对能带结构、载流子 散射和复合）是众所周知的深刻影响 硅器件的行为。 重杂质的影响 掺杂对GaAs光学性质的影响已经被广泛研究， 但实验工作，以评估其影响的电气 设备的属性实际上是不存在的。 的目的 研究是通过实验表征平衡np产物 以及少数载流子迁移率与多数载流子迁移率 GaAs中的浓度 这项研究将增加我们对 的能带结构和少数载流子散射机制 重掺杂砷化镓 它将提供数据来测试现有的理论 模型和信息对于设备设计至关重要。一个 理解与重离子相关的能带结构变化 杂质设计还可以允许新的器件选择， 由于重杂质而自然产生异质结 兴奋剂

Minority carrier transport in heavily doped GaAs controls the performance of bipolar devices such as heterojunction bipolar transistors and solar cells. So-called heavy doping effects (that is, the influence of heavy impurity doping on the band structure, carrier scattering, and recombination) are well-known to profoundly influence the behavior of silicon devices. The influence of heavy impurity doping on the optical properties of GaAs has been extensively studied, but experimental work to assess its influence on the electrical properties of devices is virtually nonexistent. The objective of this research is to experimentally characterize the equilibrium np product and the minority carrier mobility versus majority carrier concentration in GaAs. The research will increase our knowledge of the band structure and minority carrier scattering mechanisms in heavily doped GaAs. It will provide data to test existing theoretical models and information that is essential for device design. An understanding of the band structure changes associated with heavy impurity design may also permit new device options which exploit the heterojunctions that occur naturally as a result of heavy impurity doping.