The Hydrodynamic Model for Semiconductor Devices: Theory and Computations

半导体器件的流体动力学模型：理论与计算

• 批准号: 8905872
• 负责人: Carl Gardner
• 金额: $ 3.7万
• 依托单位: Duke University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-01 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8905872&HistoricalAwards=false
• 关键词: Hydrodynamic; Model; Semiconductor; Devices; Theory

This research is concerned with theoretical and computational investigations of the flow of electrons and holes in semiconductor devices based on the hydrodynamic model. Numerical simulations of both 1-d and 2-d semiconductor devices are proposed, for both subsonic and subsonic/supersonic flow of charge carriers. The hydrodynamic shock waves will be analyzed theoretically and computationally. The physical importance of the hydrodynamic model for simulating 2-d Si and GaAs MESFETs will be demonstrated.

本研究涉及基于流体动力学模型的半导体器件中电子和空穴流动的理论和计算研究。 针对载流子的亚音速和亚音速/超音速流动，提出了一维和二维半导体器件的数值模拟。 将对流体动力冲击波进行理论和计算分析。 将展示模拟二维 Si 和 GaAs MESFET 的流体动力学模型的物理重要性。