GaAs MESFET Characterization and Modeling for High- temperature Integrated Circuit Applications (25-250 C and above)

这项研究关注的是环境温度升高的影响， 和衬底温度（25 ℃至250 ℃或更高） 集成GaAs的终端特性 MESFETH。 这项工作将侧重于详细的 大型和小型的实验和分析建模 晶体管的信号参数，特别是 强调温度引起的阈值漂移 电压作为一个结果的backgating，和变化， 小信号输出电导gd=dID/dVgs， 温度和频率。 最有可能的受益者 恶劣环境高速集成电路 包括汽车、航空器、航天、 地热勘探行业，所有的 20世纪90年代的电子应用计划， 将超越硅的能力。 这项工作 因此，预计即将到来的需求， 美国工业的重要部门。

This research concerns the effects of elevated ambient and substrate temperatures (25 C to 250 C or higher) on the terminal characteristics of integrated GaAs MESFETs. The work will focus on the detailed experimental and analytical modeling of large and small signal parameters of the transistors, with particular emphasis on temperature-induced shift of threshold voltage as a result of backgating, and variations of small-signal output conductance gd=dID/dVgs with temperature and frequency. The most likely beneficiaries of severe-environment high-speed integrated circuits include the automobile, the aircraft, the space and geothermal exploration industries, all of whose projected electronics applications for the 1990's and beyond will exceed the capabilities of silicon. This work thereby anticipates the forthcoming needs of a large and important sector of U.S. industry.