Silicon Carbide (SiC) transistor characterization and modeling for very high-temperature integrated circuit applications (25-400'C and above)

本研究关注环境温度和衬底温度升高（25℃至400℃或更高）对集成碳化硅（六边形或6H多型- SiC） MOS场效应晶体管终端特性的影响。这项工作将集中在晶体管大小信号参数的详细实验和分析建模上，特别强调泄漏电流、沟道迁移率和温度引起的衬底偏置阈值电压偏移。

This research concerns the effects of elevated ambient and substrate temperatures (25oC to 400oC or higher) on the terminal characteristics of integrated Silicon Carbide (hexagonal or 6H polytype - SiC) MOS Field-Effect transistors. The work will focus on the detailed experimental and analytical modeling of large and small signal parameters of the transistors, with particular emphasis on leakage currents, on channel mobility, and on temperature- induced threshold voltage shifts with substrate bias.