Integrated Ferroelectric and Superconductor Concept for Device Applications

用于设备应用的集成铁电和超导体概念

• 批准号: 8960333
• 负责人: William Lawless
• 金额: $ 4.96万
• 依托单位: CeramPhysics Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-01-01 至 1990-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8960333&HistoricalAwards=false
• 关键词: Integrated; Ferroelectric; Superconductor; Concept; Device

The high temperature superconductor, BiCaSrCu-oxide, and the ferroelectric Bi4Ti3O12 have orthorhombic lattice constants that match almost exactly. Single crystals of the Bi-ferroelectric are available in the form of large thin plates where the long axis of the unit cell is perpendicular to the plate, and thin/thick films of the Bi-superconductor can be grown by liquid phase epitaxy. This research deals with an integrated ferroelectric + superconductor structure wherein a film of the Bi-superconductor is grown on a crystal plate of the Bi- ferroelectric. The utility of this approach is that the piezoelectric stress induced in the ferroelectric plate by an applied voltage is used to alter the properties of the superconducting film in the a-b plane for device applications. Measurements of these stress effects on the superconducting transition temperature and critical current density are proposed and anisotropic couplings using actual integrated structures. Magnetic-field effects will also be studied (i.e., magnetic field parallel and perpendicular to the current direction in the film). Lastly, device applications suggested by the measurements will be evaluated.

高温超导体BiCaSrCu氧化物和 铁电体Bi 4 Ti 3 O 12具有正交晶格常数， 几乎完全吻合。 双铁电体单晶 可以以大薄板的形式获得， 所述单元电池的轴垂直于所述板，并且 Bi超导体的薄/厚膜可以通过液体生长 相外延 这项研究涉及一个综合的 铁电体+超导体结构，其中， Bi-超导体生长在Bi-超导体的晶体板上， 铁电的 这种方法的效用在于， 铁电板中产生的压应力 所施加的电压用于改变 用于器件应用的a-b平面中的超导膜。 测量这些应力对超导体的影响 提出了相变温度和临界电流密度 和使用实际集成结构的各向异性耦合。 还将研究磁场效应（即，磁 平行和垂直于电流方向的磁场 电影）。 最后，根据测量结果， 将被评估。