Epitaxial Grain Growth in Metallic Thin Films

金属薄膜中的外延晶粒生长

• 批准号: 9001698
• 负责人: Carl Thompson
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1993-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9001698&HistoricalAwards=false
• 关键词: Epitaxial; Grain; Growth; Metallic; Thin

This research consists of an experimental and theoretical investigation of grain growth in polycrystalline films on single crystal substrates. Reflected high energy and transmission electron diffraction, transmission electron microscopy, and thin film X-ray texture analysis are employed to characterize the film grain size and orientation. Metal-on-metal, metal-on-mica, and metal-on-alkali halide model systems are the principal materials under study. Experimental results on grain growth are compared to predictions from computer simulations and analytical theories. A primary goal is to determine the film/substrate interface energy as a function of relative film/substrate orientation by experimental methods and compare these results with atomistic computer simulations.

本研究包括实验和理论研究。 单晶多晶薄膜中晶粒生长研究 晶体衬底 反射高能和透射 电子衍射，透射电子显微镜，和薄 薄膜X射线织构分析被用来表征薄膜 晶粒尺寸和取向。 金属对金属，金属对云母， 金属-碱金属卤化物模型系统是主要材料 正在研究中。 对晶粒长大的实验结果进行了比较 到计算机模拟和分析理论的预测。 主要目标是确定膜/基底界面 能量作为相对膜/衬底取向的函数， 实验方法和比较这些结果与原子 计算机模拟