Epitaxial Grain Growth in Metallic Thin Films

金属薄膜中的外延晶粒生长

• 批准号: 9408201
• 负责人: Carl Thompson
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9408201&HistoricalAwards=false
• 关键词: Epitaxial; Grain; Growth; Metallic; Thin

9408201 Thompson The goal of this study is quantitative understanding of the origins and evolution of texture during grain growth in thin films, and the ability to accurately predict grain size and orientation distributions as a function of thermal and process history of different film/substrate combinations. Experimental and theoretical research on grain growth and texture evolution in polycrystalline films is focused towards the competitive effects on minimization of the film/substrate interface energy and minimization of strain energy densities. The research includes the polycrystalline-silver/single-crystal-nickel system, silver/copper, and a number of polycrystalline metallic films on a variety of silica-coated substrates with different thermal expansion coefficients. Strain energy is controlled through the choice of substrates and through modifications in thermal history. Known strains are imposed using 4-point and 3-point bending. Texture evolution is characterized using thin film X-ray diffraction and several electron diffraction techniques. Grain sizes are characterized using electron and focused ion beam microscopy and film stresses are monitored by measurements of wafer curvature, both during and after heating and grain growth. A computer program for simulation of grain growth in thin films will be improved to account for orientation-dependent strain-energy-density differences, in both elastically strained and plastically deformed films. %%% This research should improve technology for creating thin films used in a variety of industrial applications. ***

9408201 Thompson 这项研究的目标是定量了解薄膜晶粒生长过程中织构的起源和演变，以及准确预测晶粒尺寸和取向分布作为不同薄膜/基材组合的热和工艺历史函数的能力。 多晶薄膜中晶粒生长和织构演化的实验和理论研究重点是薄膜/基体界面能最小化和应变能密度最小化的竞争效应。 研究内容包括多晶银/单晶镍体系、银/铜以及在具有不同热膨胀系数的各种二氧化硅涂层基底上的多种多晶金属薄膜。 应变能是通过基材的选择和热历史的修改来控制的。 使用 4 点和 3 点弯曲施加已知应变。 使用薄膜 X 射线衍射和多种电子衍射技术来表征纹理演化。 使用电子和聚焦离子束显微镜来表征晶粒尺寸，并通过测量加热和晶粒生长期间和之后的晶片曲率来监测薄膜应力。 用于模拟薄膜晶粒生长的计算机程序将得到改进，以解决弹性应变和塑性变形薄膜中与取向相关的应变能量密度差异。 %%% 这项研究应该改进用于各种工业应用的薄膜制造技术。 ***