8-12 Micron GaAs/AlGaAs Multiple Quantum Well Image Sensor Cel

8-12微米GaAs/AlGaAs多量子阱图像传感器单元

• 批准号: 9016263
• 负责人: Ken Chin
• 金额: --
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-01 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9016263&HistoricalAwards=false
• 关键词: 12; Micron; GaAs; AlGaAs; Multiple

We propose to study the design, fabrication, and characterization of the 8-12 u long wavelength infrared (LWIR) sensing element of image sensor cell, which is composed of one GaAs/AlGaAs multiple quantum well (MQW) photoconductor and three modulation doped field effect transistor (MODFET) switches, controlling the cell's charging, output, and reset, respectively. The critical issue is how to make the mesa structures of the MOW photoconductor and the planar structures of the MODFET compatible. BAsed on our new invention of the integration of MQW photocondutor and FET structures, the patent of which is being applied, the design and fabrication procedure of a monolithically integrated image sensor cell is proposed. The success of the project is crucial for the development of the monolithically integrated GaAs/AlGaAs multiple quantum well imager, which is a two dimensional focal plane array of sensor cells combined with the signal readout circuits. The development of the monolithic long wavelength IR multiple quantum well image sensor represents an important goal, not only in the thermal imaging technology, but also int he innovative application of superlattices.

我们建议研究的设计，制造， 8-12 u长波红外光谱表征 （LWIR）感测元件，其 由一个GaAs/AlGaAs多量子阱（MQW）组成， 光电导体和三调制掺杂场效应 晶体管（MODFET）开关，控制单元的 充电、输出和复位。 临界 问题是如何制作MOW的梅萨结构 光电导体和MODFET的平面结构 兼容. 基于我们新发明的 MQW光电二极管和FET结构的集成， 正在申请专利的，外观设计和 单片集成电路的制造工艺 提出了一种图像传感器单元。 的成功 该项目对发展中国家至关重要， 单片集成GaAs/AlGaAs多量子 井成像仪，这是一个二维焦平面 与信号读出相结合的传感器单元阵列 电路. 单片式长 波长红外多量子阱图像传感器 代表了一个重要的目标，不仅在热 成像技术，而且还在创新 超晶格的应用