Monolithic GaAs 8-12 Direct Multiple Quantum Well Injection Image Sensor

单片 GaAs 8-12 直接多量子阱注入图像传感器

• 批准号: 9114824
• 负责人: Ken Chin
• 金额: --
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1994-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9114824&HistoricalAwards=false
• 关键词: Monolithic; GaAs; 12; Direct; Multiple

We purpose an NJIT-ETDL joint research project to study the design, fabrication, and characterization of monolithic GaAs 8-12 u direct multiple quantum well (MQW) injection image sensor ?1!. We purpose the GaAs/A1GaAs MQW infrared hot electron transistor (IHET, invented at ETDL) as the photodetector, and direct injection through an undoped GaAs layer as the mechanism for interfacing between 8-12 u IR photodetectors and current readout devices. The proposed image sensor or focal plane array (FPA) structure is optimized for 300 K thermal imaging performance, as well as for fabrication simplicity. Special attention is paid to readout charge handling and detector array fill factor, as well as the minimization of noise and cross talk.

我们的 NJIT-ETDL 联合研究项目旨在研究单片 GaAs 8-12 u 直接多量子阱 (MQW) 注入图像传感器 ?1! 的设计、制造和表征。 我们将 GaAs/A1GaAs MQW 红外热电子晶体管（IHET，在 ETDL 发明）用作光电探测器，并通过未掺杂的 GaAs 层直接注入作为 8-12 u 红外光电探测器和电流读出设备之间的接口机制。 所提出的图像传感器或焦平面阵列 (FPA) 结构针对 300 K 热成像性能以及制造简单性进行了优化。 特别关注读出电荷处理和探测器阵列填充因子，以及噪声和串扰的最小化。