Experimental and Modeling Studies of Impurities at Metal/ Organic Vapor Phase Epitaxy-Grown Interfaces

研究将对杂质对金属-有机气相外延（MOVPE）生长界面的性质和原子级结构的影响有一个基本的了解。尽管杂质对纳米结构和异质结构器件的发展具有重要意义，但由于缺乏联合实验研究和观察到的相互作用的相关建模，在MOVPE技术中，杂质对界面的详细结构和性能的作用在很大程度上尚未得到探索。通过紧密耦合的实验和建模努力，界面或表面结构与杂质掺入和行为之间的相互作用将在本研究项目中确定。我们将使用一种综合的方法，包括在含有前驱体的杂质的化学性质的变化以及表面结构。这些实验研究将由发展中的生长前沿的化学和结构建模工作来补充和支持。将使用几种互补的建模技术，包括流体流动，传热和传质的真实连续描述，结合详细的气相和表面化学动力学机制以及杂质改性MOVPE生长的现象学模型。该计划的主要目标是对化合物半导体材料的外延生长，加工和特性有一个基本的了解，以便它们可以在各种先进的电子和光子器件的实现中得到充分利用。这些研究结果将有助于更好地理解与一系列电子/光子材料生长和加工技术相关的基本界面和生长过程。该计划的一个重要特点是在材料和加工研究的基础和技术上具有重要意义的领域培养研究生和本科生。本研究将有助于提高用于计算、信息处理和远程通信的先进器件和集成电路的总体性能。＊＊＊

9414334 Kuech Research will be carried out to obtain a fundamental understanding of the influence of impurities on the properties, and atomic level structure of metallo-organic vapor phase epitaxy(MOVPE) grown interfaces. The role of impurities on the detailed structure and properties of interfaces has been largely unexplored in the MOVPE technique, despite the importance of this area to the development of nanostructure and heterostructure devices, due to the lack of combined experimental studies and the related modeling of the observed interactions. Through a tightly coupled experimental and modeling effort, the interplay between the interface or surface structure and impurity incorporation and behavior will be identified in this research project. We will use a comprehensive approach which includes changes in the chemical nature of the impurity containing precursor as well as the surface structure. These experimental studies will be complemented and supported by modeling efforts of the chemistry and structure of the developing growth front. Several complementary modeling techniques will be used including realistic continuum descriptions of fluid flow, heat and mass transfer combined with detailed gas phase and surface chemical kinetic mechanisms and phenomenological models of impurity modified MOVPE growth. %%% The primary goal of this program is to develop a fundamental understanding of the epitaxial growth, processing, and properties of compound semiconductor materials so that they can be fully exploited in the realization of a variety of advanced electronic and photonic devices. The findings of these studies will lead to a better understanding of the basic interface and growth processes relevant to a range of growth and processing techniques for electronic/photonic materials. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***