Experimental and Modeling Studies of Impurities at Metal/ Organic Vapor Phase Epitaxy-Grown Interfaces

金属/有机气相外延生长界面杂质的实验和建模研究

• 批准号: 9414334
• 负责人: Thomas Kuech
• 金额: $ 46.66万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1999-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9414334&HistoricalAwards=false
• 关键词: Experimental; Modeling; Studies; Impurities; Metal

9414334 Kuech Research will be carried out to obtain a fundamental understanding of the influence of impurities on the properties, and atomic level structure of metallo-organic vapor phase epitaxy(MOVPE) grown interfaces. The role of impurities on the detailed structure and properties of interfaces has been largely unexplored in the MOVPE technique, despite the importance of this area to the development of nanostructure and heterostructure devices, due to the lack of combined experimental studies and the related modeling of the observed interactions. Through a tightly coupled experimental and modeling effort, the interplay between the interface or surface structure and impurity incorporation and behavior will be identified in this research project. We will use a comprehensive approach which includes changes in the chemical nature of the impurity containing precursor as well as the surface structure. These experimental studies will be complemented and supported by modeling efforts of the chemistry and structure of the developing growth front. Several complementary modeling techniques will be used including realistic continuum descriptions of fluid flow, heat and mass transfer combined with detailed gas phase and surface chemical kinetic mechanisms and phenomenological models of impurity modified MOVPE growth. %%% The primary goal of this program is to develop a fundamental understanding of the epitaxial growth, processing, and properties of compound semiconductor materials so that they can be fully exploited in the realization of a variety of advanced electronic and photonic devices. The findings of these studies will lead to a better understanding of the basic interface and growth processes relevant to a range of growth and processing techniques for electronic/photonic materials. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***

9414334 KUECH研究将从根本上了解杂质对金属有机气相外延(MOVPE)生长界面的性质和原子级结构的影响。在MOVPE技术中，尽管杂质对纳米结构和异质结构器件的发展非常重要，但由于缺乏联合的实验研究和对观察到的相互作用的相关建模，在很大程度上还没有探索杂质对界面详细结构和性质的作用。通过紧密耦合的实验和模拟工作，本研究项目将确定界面或表面结构与杂质掺入和行为之间的相互作用。我们将使用一种全面的方法，包括改变含有杂质的前体的化学性质以及表面结构。这些实验研究将得到发展中增长前沿的化学和结构建模工作的补充和支持。将使用几种互补的建模技术，包括对流体流动、传热和传质的真实连续描述，结合详细的气相和表面化学动力学机制，以及杂质修饰的MOVPE生长的唯象模型。%本课程的主要目标是对化合物半导体材料的外延生长、加工和性能有一个基本的了解，以便在实现各种先进的电子和光子器件时充分利用它们。这些研究的结果将有助于更好地了解与电子/光子材料的一系列生长和加工技术相关的基本界面和生长过程。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高用于计算、信息处理和远程通信的先进器件和集成电路的综合性能。***