Experimental and Modeling Studies of Impurities at Metal/ Organic Vapor Phase Epitaxy-Grown Interfaces

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9414334 Kuech Research will be carried out to obtain a fundamental understanding of the influence of impurities on the properties, and atomic level structure of metallo-organic vapor phase epitaxy(MOVPE) grown interfaces. The role of impurities on the detailed structure and properties of interfaces has been largely unexplored in the MOVPE technique, despite the importance of this area to the development of nanostructure and heterostructure devices, due to the lack of combined experimental studies and the related modeling of the observed interactions. Through a tightly coupled experimental and modeling effort, the interplay between the interface or surface structure and impurity incorporation and behavior will be identified in this research project. We will use a comprehensive approach which includes changes in the chemical nature of the impurity containing precursor as well as the surface structure. These experimental studies will be complemented and supported by modeling efforts of the chemistry and structure of the developing growth front. Several complementary modeling techniques will be used including realistic continuum descriptions of fluid flow, heat and mass transfer combined with detailed gas phase and surface chemical kinetic mechanisms and phenomenological models of impurity modified MOVPE growth. %%% The primary goal of this program is to develop a fundamental understanding of the epitaxial growth, processing, and properties of compound semiconductor materials so that they can be fully exploited in the realization of a variety of advanced electronic and photonic devices. The findings of these studies will lead to a better understanding of the basic interface and growth processes relevant to a range of growth and processing techniques for electronic/photonic materials. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***