Novel Photoactive Process for Microlithographic Applications

这一建议涉及到一种新的光刻工艺的初步发展，该工艺能够产生亚微米微光刻图像。该提案涉及用非反应性的气态光活性材料浸渍非辐射敏感聚合物抗蚀剂涂层的工艺，使用各种曝光源对所述组合物进行成像，去除未反应的光活性材料，然后显影留下潜在图像。最好采用氧反应离子蚀刻。该工艺的主要优点是不需要辐射敏感抗蚀剂，也不需要使用多种涂层；与标准光刻胶加工相比，它几乎不需要额外的加工。它能够在顶层成像过程中提供亚微米图像尺寸。该过程的基调可以是积极的，也可以是消极的，这取决于处理步骤的顺序。该工艺适用于紫外、深紫外、x射线、电子束和离子束辐射成像。它对于在半导体和光电基板上形成抗蚀剂图像以及印刷电路板、内层、光盘和光刻板制备具有潜在的用途。

This proposal relates to initial into the development of a novel new lithographic process which is capable of generating submicrometer microlithographic images. The proposal relates to a process of impregnating a non-radiation sensitive polymeric resist coating with a non-reactive, gaseous photoactive material, imaging said composition using a variety of exposure sources, removing the unreacted photoactive material, leaving of latent image is then developed, preferably using oxygen reactive ion etching. The major benefit is that this process does not require a radiation sensitive resist, nor does it use multiple coatings; and it involves little or virtually no additional processing compared to standard photoresist processing. It is capable of providing submicron image dimensions in a top layer imaging process. The tone of the process can be either positive or negative, depending on the sequence of processing steps. This process is useful for imaging with ultraviolet, deep-UV, X-ray, electron-beam, and ion-beam radiation. It is potentially useful for the formation of resist images on semiconductor and electro-optical substrates, as well as printed circuit board, innerlayer, optical disc, and litho plate preparation.