Japan Long-Term Research Visit: Basic Mechanisms and Engineering Issues for the Fabrication of Smooth Diamond andCubic Boron Nitride Films
Japan Long-Term Research Visit: Basic Mechanisms and Engineering Issues for the Fabrication of Smooth Diamond andCubic Boron Nitride Films
批准号:
9200869
负责人:
Yonhua Tzeng
金额:
$4.7万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-03-15 至 1993-08-31
中文摘要
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英文摘要
This award will support a long-term research visit by Professor Yonhua Tzeng, Department of Electrical Engineering, Auburn University in Alabama to Japan for a cooperative research project with Professor Masanori Yoshikawa, Department of Mechanical Engineering, Tokyo Institute of Technology. The researchers plan to undertake a study on diamond film synthesis by arc discharge plasma jets and the polishing of deposited diamond films by mechanical and chemical means. During his visit to Japan Professor Tzeng will also be visiting Professors Masao Murakawa and Y. Hirose in the Department of Electrical Engineering at the Nippon Institute of Technology in Saitama. During these visits they will be performing research on ion plating of cubic boron nitride films and flame CD of diamond films. The research results have the potential of achieving high-rate deposition and cost-effective polishing of diamond and cubic boron nitride films which are crucial to practical applications of these high performance materials to electronic, optical, thermal, and mechanical devices and systems. Professors Yoshikawa, Murakawa and Hirose are all recognized experts and their laboratories are world leaders in the areas of diamond and cubic boron nitride films. Their previous experience, coupled with Professor Tzeng's expertise in the field should provide a fruitful collaboration. It is expected that collaborations between the researchers will continue even after the formal agreement has terminated.
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International Conference on the Applications of Diamond Films and Related Materials to be held in Auburn, Alabama on August 20-22, 1991
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批准号:9106990
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项目类别:Standard Grant
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资助金额:$0.5万
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财政年份:1991
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负责人:Yonhua Tzeng
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依托单位:
Research Initiation: Impact of Gaseous Electronics on the Plasma Processing of Materials
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批准号:8504781
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1985
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负责人:Yonhua Tzeng
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依托单位:
Engineering Research Equipment Grant: Auger Electron Spectroscopy System for Microelectronics and Material Surface Research
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批准号:8506546
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项目类别:Standard Grant
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资助金额:$9.0万
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财政年份:1985
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负责人:Yonhua Tzeng
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依托单位:
国内基金
海外基金
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