Deposition of AlN Films from Organoaluminum-Nitrogen Compounds: A Paradigm for CVD from Single-Source Precursors

有机铝氮化合物沉积 AlN 薄膜：单源前驱体 CVD 范例

• 批准号: 9202973
• 负责人: Leonard Interrante
• 金额: $ 33.5万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202973&HistoricalAwards=false
• 关键词: Deposition; AlN; Films; Organoaluminum; Nitrogen

This award is made in the Special Projects Office of the Chemistry Division under the Materials Synthesis and Processing Initiative. The research will address the problem of formation of thin films of compound materials by chemical vapor deposition (CVD) from organometallic precursors. The intent is to correlate the basic gas phase and surface chemical behavior of the precursors with the structure and purity of the resulting films, and with the efficiency of precursor conversion to final product. The system to be investigated is the production of AlN films from organoaluminum-ammonia or -amide precursors containing aluminum and nitrogen in the correct stoichiometric ratio. The gas phase and surface chemistry of these precursors will be studied using a combination of mass spectrometry with time-of-flight measurements of product species, and pulsed beam Fourier transform microwave spectroscopy. Thin film deposition will be carried out in a cold-wall, hot-stage CVD system. Films formed in this system and in the course of the surface chemistry studies will be characterized by a range of surface and analytical techniques to determine their composition, structure and orientational relationships. %%% This study will provide a comprehensive picture of the steps leading from precursor to film in AlN deposition, and in the process identify the critical reaction steps controlling composition and structure. This information can also be used in the design of improved precursor systems for AlN as well as serving as a paradigm for the CVD of other electronic and ceramic systems.

该奖项是在特别项目办公室的 材料合成与加工化学部 倡议这项研究将解决形成的问题 用化学汽相法制备复合材料薄膜 沉积（CVD）从有机金属前体。目的是 将基本气相和表面化学行为联系起来 的结构和纯度的前体的 所得的膜，并与前体的效率 转化为最终产品。要研究的系统是 由有机铝-氨或 - 酰胺前体，所述酰胺前体中含有铝和氮， 正确的化学计量比。气相和表面 这些前体的化学将使用 飞行时间质谱联用 产品种类的测量和脉冲束傅立叶 变换微波光谱学 薄膜沉积将是 在冷壁热阶段CVD系统中进行。 形成的膜 在这个系统和表面化学过程中 研究将以一系列表面和 分析技术，以确定其组成，结构， 和方位关系。 %%% 这项研究将提供一个全面的图片的步骤 在AlN沉积中从前体到膜，以及在 过程识别关键反应步骤控制 组成和结构。这些信息也可以用于 设计改进的氮化铝前驱体系统， 作为其他电子和电子产品CVD的典范， 陶瓷系统