Hetero Epitaxial Growth of Layered Metal Chalcogenides

这是1992年的RIA奖。 提出要 发展一种制造异质结的新概念， 使用货车德瓦耳斯表面的界面系统 层状金属硫族化物材料。 这 将在实验中研究， 不同种类的层状金属硫属化物 在彼此之上，通过分子 束外延，一种被称为 称为“货车范德华外延”。 特别 这种方法的优点是能够 制造原子和电子突变 不考虑其晶格异质界面 匹配要求。 外延 将详细研究条件， 提高薄膜的质量， 基本的成核和生长 将研究外延层。 由于 叠层顺序的灵敏度 过渡金属的性质 我们将开发一种技术， 以确定“多元”的增长 使用反射高能的薄膜 电子衍射振荡。 独特的 异质界面的性质， 这种方法将允许调查 与电子有关的基本问题 金属和半导体之间的转移， 由此合理设计肖特基器件 结构将进行探索。 最后，增长 选择的半导体层状金属 GaAs上的硫族化物将在 新的发展观 材料系统。 潜在的灵活性 构建复杂的层状异质结构 包含不同的材料， 具体的材料特性将构成 异质外延重大突破 技术.

This is a 1992 RIA Award. It is proposed to develop a new concept for fabricating hetero- interface systems using van der Waals surfaces of layered metal chalcogenide materials. This will be studied experimentally by growing different kinds of layered metal chalcogenides on top of each other by means of molecular beam epitaxy, a process that has been referred to as "van der Waals epitaxy". Of particular interest of this method is the ability to fabricate atomically and electronically abrupt hetero-interfaces without regard to their lattice matching requirement. The epitaxial conditions will be investigated in detail for improving the quality of the thin films, and the fundamental nucleation and growth of the epitaxial layers will be investigated. Due to the sensitivity of the layer stacking sequence to the properties of transition metal dichalcogenides, we will develop a technique to determine the "polytpism" of the growing thin film using Reflection High Energy Electron Diffraction oscillations. The unique nature of the hetero-interfaces fabricated by this method will allow the investigation of the fundamental aspects related to the electron transfer between metals and semiconductors, from which rational design of Schottky device structure will be explored. Finally the growth of selected semiconducting layered metal chalcogenide on GaAs will be investigated in a view toward the development of newer material systems. The potential flexibility for constructing complex layered heterostructures containing different materials selected for their specific material properties will constitute a substantial breakthrough in heteroepitaxy technology.