Growth and Characterization of GaAs Epitaxial Thin Films on van der Waals Surfaces

9414298 Ohuchi在这个建议中，我们概述了一个研究计划，以调查新的GaAs基结构的生长和表征。 该计划的动机源于我们正在进行的研究努力，以开发用于生长异质结构的新的处理路线，而不考虑它们的晶格匹配要求。 在这项工作中，我们开发了一种生长方法称为货车德瓦尔斯外延（VDWE）。 VDWE是晶体学二维（2D）层状材料的外延生长，其中层通过货车德瓦尔斯力保持在一起，并且在表面不包含未满足的共价键。 我们已经证明，在过去，这些货车范德华材料可以外延生长在广泛的三维（3D）材料，包括GaAs，Al 2 O 3和CaF 2。 如果GaAs层然后可以生长在该货车范德华表面的顶部上，则可以有效地解耦具有不同晶格常数的两种3D材料之间的界面，从而适应晶格失配。 由于跨界面的弱货车范德华力，也可以去除（或剥离）外延层，用于表征宽面积薄膜和进一步处理去耦异质结构器件。 ***

9414298 Ohuchi In this proposal we outline a research program to investigate the growth and characterization of new GaAs based structures. the motivation of this program originated from our on-going research effort to develop novel processing routes for growing heterostructures without regard to their lattice matching requirement. In this effort, we have developed a growth method called van der Waals epitaxy (VDWE). VDWE is the epitaxial growth of crystallographically two-dimensional (2D) layered materials, of which layers are held together by van der Waals forces, and contain no unsatisfied covalent bonds at the surface. We have demonstrated in the past that these van der Waals materials can be grown epitaxially on a wide range of three-dimensional (3D) materials including GaAs, A12O3 and CaF2. If GaAs Layers could then be grown on top of this van der Waals surface, it would be possible to effectively decouple the interface between the two 3D materials with dissimilar lattice constants and thereby accommodate the lattice mismatch. Due to the weak van der Waals forces across the interface, it is also possible to remove (or lift-off) the epitaxial layers for both characterizing broad area thin films and further processing of decoupled heterostructure devices. ***