Growth and Characterization of GaAs Epitaxial Thin Films on van der Waals Surfaces

范德华表面上砷化镓外延薄膜的生长和表征

• 批准号: 9414298
• 负责人: Fumio Ohuchi
• 金额: $ 10万
• 依托单位: University of Washington
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9414298&HistoricalAwards=false
• 关键词: Growth; Characterization; GaAs; Epitaxial; Thin

9414298 Ohuchi In this proposal we outline a research program to investigate the growth and characterization of new GaAs based structures. the motivation of this program originated from our on-going research effort to develop novel processing routes for growing heterostructures without regard to their lattice matching requirement. In this effort, we have developed a growth method called van der Waals epitaxy (VDWE). VDWE is the epitaxial growth of crystallographically two-dimensional (2D) layered materials, of which layers are held together by van der Waals forces, and contain no unsatisfied covalent bonds at the surface. We have demonstrated in the past that these van der Waals materials can be grown epitaxially on a wide range of three-dimensional (3D) materials including GaAs, A12O3 and CaF2. If GaAs Layers could then be grown on top of this van der Waals surface, it would be possible to effectively decouple the interface between the two 3D materials with dissimilar lattice constants and thereby accommodate the lattice mismatch. Due to the weak van der Waals forces across the interface, it is also possible to remove (or lift-off) the epitaxial layers for both characterizing broad area thin films and further processing of decoupled heterostructure devices. ***

在本提案中，我们概述了一个研究计划，以研究新的GaAs基结构的生长和表征。该计划的动机源于我们正在进行的研究工作，即开发新的加工路线来生长异质结构，而不考虑其晶格匹配要求。在这项工作中，我们开发了一种称为范德华外延（VDWE）的生长方法。VDWE是晶体学上二维（2D）层状材料的外延生长，其中各层通过范德华力结合在一起，并且在表面没有不满足的共价键。我们过去已经证明，这些范德华材料可以在广泛的三维（3D）材料上外延生长，包括GaAs， A12O3和CaF2。如果可以在范德华表面上生长GaAs层，就有可能有效地解耦具有不同晶格常数的两种3D材料之间的界面，从而适应晶格不匹配。由于跨界面的范德瓦尔斯力较弱，也可以去除（或提离）外延层，用于表征广域薄膜和进一步处理去耦异质结构器件。＊＊＊