Research Initiation: Plasma-Assisted Pulsed Laser Deposition of High Temperature Superconducting Thin Films; Novel Optical Plume Diagnostics

研究启动：等离子体辅助脉冲激光沉积高温超导薄膜；

• 批准号: 9210326
• 负责人: Pritish Mukherjee
• 金额: $ 10万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1996-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9210326&HistoricalAwards=false
• 关键词: Research; Initiation; Plasma; Assisted; Pulsed

The project will investigate the physical principle underlying the plasma-assisted laser deposition process for the in situ growth of high critical temperature superconducting thin films on a substrate. An understanding of the physical mechanisms governing the process are critical for reproducible thin film deposition on a low temperature substrate and subsequent integration into existing semiconductor technologies. The successful modeling and control of the deposition process may allow the manufacture of superconducting thin films with the consistent properties that are needed to produce devices that are of practical usefulness.

该项目将研究潜在的物理原理 用于原位生长的等离子体辅助激光沉积工艺 高临界温度超导薄膜 衬底 了解控制 该方法对于在其上可再现薄膜沉积是关键的 低温衬底和随后的集成 现有的半导体技术。 沉积过程的成功建模和控制 可以允许制造超导薄膜 一致的性能，需要生产设备， 实用性。