Pulsed Laser Ablation for Manufacturing: A Novel Dual-LaserFilm Growth Process

用于制造的脉冲激光烧蚀：一种新颖的双激光薄膜生长工艺

• 批准号: 9622114
• 负责人: Pritish Mukherjee
• 金额: $ 25.87万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-12-01 至 2000-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9622114&HistoricalAwards=false
• 关键词: Pulsed; Laser; Ablation; Manufacturing; Novel

Mukherjee 9622114 Electronic and optical thin film production currently relies on techniques such as molecular beam epitaxy (MBE), chemical vapor deposition, sputtering, liquid phase epitaxy, ion beam deposition, and thermal evaporation. The research is to study the interaction of the CO2 laser with the target as well as the effect of inter-pluse delay of the temporal shaping on the coupling of the CO2 laser energy to the excimer laser-ablated plume. Both theorical and experimental models will be studied to optimize the process parameters. To assess the flexibility of the proposed dual-laser process as a manufacturing method, three diferent materials, including Lithium Niobate, High Temperature Superconductor, and Amorphous rare earth-transition metal alloys will be investigated. The outcome of this research project would allow the development of a database for the general applicability of this technique, thus the realization of the use of pulsed laser deposition (PLD) for manufacturing could be achieved. The outcomes of the study would yield useful tools and models to develop a novel manufacturing technique which combine the merits of molecular epitaxy technology and single source deposition

慕克吉 电子和光学薄膜生产目前依赖于诸如分子束外延（MBE）、化学气相沉积、溅射、液相外延、离子束沉积和热蒸发的技术。研究了CO2激光与靶的相互作用以及时间整形的脉冲间延迟对CO2激光能量与准分子激光烧蚀羽流耦合的影响。 理论和实验模型将被研究，以优化工艺参数。 为了评估所提出的双激光工艺作为制造方法的灵活性，将研究三种不同的材料，包括铌酸锂、高温超导体和非晶稀土-过渡金属合金。 该研究项目的成果将允许开发一个数据库，该技术的普遍适用性，从而实现使用脉冲激光沉积（PLD）的制造可以实现。本研究的结果将产生有用的工具和模型，以开发一种新的制造技术，该技术将分子外延技术和单源沉积的优点联合收割机结合起来