The Influence of In-Situ Photoexcitation and Electric Field on Ion Implantation Damage Accumulation in Silicon

将进行基础研究，以解决与影响离子注入引起的硅中缺陷积累的类型、密度和热稳定性的主要物理过程有关的基本和实际重要问题。该方法在注入过程中利用电子/空穴对的光注入，再加上固有的电势或二次外部控制的垂直或横向电场，来调制和控制点缺陷的密度、寿命和络合行为。这项研究致力于硅加工的基本方面，从根本上讲与先进的器件和电路制造有关。提出的这项创新研究为计算、信息处理和电信中使用的设备和集成电路提供了重大改进的可能性。

Basic research studies to address issues of both fundamental and practical importance concerning primary physical processes which influence the type, density and thermal stability of ion implantation induced defect accumulation in silicon will be conducted. The approach utilizes photo-injection of electron/hole pairs, coupled with either an intrinsically built-in electric potential, or a secondary externally controlled vertical or lateral electric field, during implantation to modulate and control the density, lifetime and complexing behavior of point defects. %%% This research addresses basic aspects of silicon processing fundamentally related to advanced device and circuit fabrication. The innovative research proposed offers possibilities for significant improvements in devices and integrated circuits used in computing ,information processing, and telecommunications.