The Influence of In-Situ Photoexcitation and Electric Field on Ion Implantation Damage Accumulation in Silicon

基础研究旨在解决基础和基础问题 关于主要物理过程的实际重要性， 影响离子的种类、密度和热稳定性 硅中注入引起的缺陷积累将 进行。 该方法利用电子/空穴的光注入 对，再加上一个固有的内置电动 潜在的，或次要的外部控制的垂直或横向 电场，以调节和控制 点缺陷的密度、寿命和络合行为。 %%% 这项研究涉及硅加工的基本方面 基本上与先进的器件和电路制造有关。 创新的研究提供了可能性， 用于制造电子设备的器件和集成电路的显著改进 计算、信息处理和电信。

Basic research studies to address issues of both fundamental and practical importance concerning primary physical processes which influence the type, density and thermal stability of ion implantation induced defect accumulation in silicon will be conducted. The approach utilizes photo-injection of electron/hole pairs, coupled with either an intrinsically built-in electric potential, or a secondary externally controlled vertical or lateral electric field, during implantation to modulate and control the density, lifetime and complexing behavior of point defects. %%% This research addresses basic aspects of silicon processing fundamentally related to advanced device and circuit fabrication. The innovative research proposed offers possibilities for significant improvements in devices and integrated circuits used in computing ,information processing, and telecommunications.