Collaborative Research: SiSoC Center proposal
合作研究:SiSoC 中心提案
基本信息
- 批准号:0758586
- 负责人:
- 金额:$ 44.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2008
- 资助国家:美国
- 起止时间:2008-02-01 至 2013-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This proposal formally establishs a multi-university Silicon Solar Consortium (SiSoC) as part of NSF?s Industry/University Cooperative Research Center (I/UCRC) program. The Georgia Institute of Technology and North Carolina State University (the lead institution) will maintain research sites to collaborate on research, fabrication, and characterization of advanced photovoltaic (PV) materials and devices. The proposed center's goal is to help reestablish a global leadership role for the U.S. Silicon PV industry by having government together with the solar-electric power industry jointly stimulate high quality university level research and education, while developing an expanded and skilled workforce. The Center will collaborate with other university and government agencies bringing together the leading academic institutions currently involved in PV research and development. Research emphasizes materials characterization leading to a fundamental understanding of impact of defects/impurities/mechanical behavior of solar cell materials to accommodate various needs of both single- and multi-crystalline Si wafers, thin films and nanoscale PV science and technology. Results will create strategies for processing advanced silicon PV structures and devices. Research will also focus on reducing the cost of PV generated electricity and designing and fabricating high efficiency solar cells. SiSoC will help develop a skilled workforce in a much needed area. This will be enabled by having NSF and other government agencies, together with the solar-electric power industry jointly stimulating high quality university level research and education. Research activity will also be strengthened through student internships at industry member locations. This center will also be used to compliment efforts for outreach and improve opportunities for underrepresented minorities/women to participate in PV materials research through such programs as the Research Experiences for Undergraduates.
该提案正式建立了一个多大学硅太阳能联盟(SiSoC)作为NSF?工业/大学合作研究中心(I/UCRC)计划。格鲁吉亚理工学院和北卡罗来纳州州立大学(牵头机构)将维持研究基地,在先进光伏(PV)材料和设备的研究、制造和表征方面进行合作。该中心的目标是帮助重建美国硅光伏行业的全球领导地位,让政府与太阳能电力行业共同促进高质量的大学水平的研究和教育,同时发展一支规模更大、技能更高的劳动力队伍。该中心将与其他大学和政府机构合作,汇集目前参与光伏研究和开发的领先学术机构。研究强调材料表征,从而从根本上了解太阳能电池材料的缺陷/杂质/机械行为的影响,以适应单晶和多晶硅晶片,薄膜和纳米级PV科学和技术的各种需求。研究结果将为加工先进的硅光伏结构和器件创造策略。研究还将侧重于降低光伏发电的成本,设计和制造高效太阳能电池。SiSoC将有助于在急需的领域培养熟练的劳动力。这将通过NSF和其他政府机构与太阳能电力行业共同促进高质量的大学水平的研究和教育来实现。研究活动也将通过在行业成员地点的学生实习得到加强。该中心还将用于补充推广工作,并通过本科生研究经验等计划,为代表性不足的少数民族/妇女提供更多机会参与光伏材料研究。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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George Rozgonyi其他文献
Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films
- DOI:
10.1016/j.mee.2010.02.008 - 发表时间:
2010-11-01 - 期刊:
- 影响因子:
- 作者:
Yo Han Yoon;Seol-Min Yi;Jung-Ryoul Yim;Ji-Hoon Lee;George Rozgonyi;Young-Chang Joo - 通讯作者:
Young-Chang Joo
George Rozgonyi的其他文献
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{{ truncateString('George Rozgonyi', 18)}}的其他基金
Planning grant request for the establishment of a multi-university I/UCRC Silicon Solar Center (SiSoC)
建立多所大学 I/UCRC 硅太阳能中心 (SiSoC) 的规划拨款申请
- 批准号:
0733648 - 财政年份:2007
- 资助金额:
$ 44.5万 - 项目类别:
Standard Grant
Dynamics of Point Defect/Impurity Interactions and Clustering Due to Ion Implantation and Thermal Annealing
离子注入和热退火引起的点缺陷/杂质相互作用和团簇的动力学
- 批准号:
0075723 - 财政年份:2000
- 资助金额:
$ 44.5万 - 项目类别:
Continuing Grant
Operational Center for Silicon Wafer Engineering and Defect Science (Si WEDS)
硅晶圆工程和缺陷科学运营中心 (Si WEDS)
- 批准号:
9726176 - 财政年份:1997
- 资助金额:
$ 44.5万 - 项目类别:
Continuing Grant
Planning Meetings for the Industry/University Cooperative Research Center for Silicon Wafer Engineering and Defect Science (Si WEDS)
硅晶圆工程与缺陷科学产学合作研究中心(Si WEDS)规划会议
- 批准号:
9712502 - 财政年份:1997
- 资助金额:
$ 44.5万 - 项目类别:
Standard Grant
The Influence of in situ Photoexcitation and Electric Field on Ion Implantation Damage Accumulation in Silicon
原位光激发和电场对硅中离子注入损伤累积的影响
- 批准号:
9628695 - 财政年份:1996
- 资助金额:
$ 44.5万 - 项目类别:
Standard Grant
The Influence of In-Situ Photoexcitation and Electric Field on Ion Implantation Damage Accumulation in Silicon
原位光激发和电场对硅中离子注入损伤累积的影响
- 批准号:
9215538 - 财政年份:1993
- 资助金额:
$ 44.5万 - 项目类别:
Continuing Grant
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