Planning grant request for the establishment of a multi-university I/UCRC Silicon Solar Center (SiSoC)
Planning grant request for the establishment of a multi-university I/UCRC Silicon Solar Center (SiSoC)
批准号:
0733648
负责人:
George Rozgonyi
金额:
$1.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-08-01 至 2008-07-31
中文摘要
将举行一次计划会议,以确定北卡罗莱纳州立大学是否可以建立一个新的多大学工业/大学合作研究中心,用于硅太阳能研究。北卡罗来纳州立大学的研究基地的努力将强调材料表征,从而对太阳能电池材料的缺陷/杂质/机械行为的影响有一个基本的了解。拟建的中心将在满足21世纪快速增长的电力需求方面发挥重要作用,同时对环境的影响最小。
英文摘要
A planning meeting will be held to determine if North Carolina State University can establish a new multi-university Industry/University Cooperative Research Center for Silicon Solar research. The efforts of the research site at NC State University will emphasize materials characterization leading to a fundamental understanding of impact of defects/impurities/mechanical behavior of solar cells materials.The proposed center will play an important role in meeting the rapidly growing demand for electricity in the 21st century, while having the significant bonus of a minimal impact on the environment.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: SiSoC Center proposal
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批准号:0758586
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项目类别:Continuing Grant
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资助金额:$44.5万
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财政年份:2008
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负责人:George Rozgonyi
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依托单位:
Dynamics of Point Defect/Impurity Interactions and Clustering Due to Ion Implantation and Thermal Annealing
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批准号:0075723
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项目类别:Continuing Grant
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资助金额:$44.88万
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财政年份:2000
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负责人:George Rozgonyi
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依托单位:
Operational Center for Silicon Wafer Engineering and Defect Science (Si WEDS)
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批准号:9726176
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项目类别:Continuing Grant
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资助金额:$51.0万
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财政年份:1997
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负责人:George Rozgonyi
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依托单位:
Planning Meetings for the Industry/University Cooperative Research Center for Silicon Wafer Engineering and Defect Science (Si WEDS)
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批准号:9712502
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项目类别:Standard Grant
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资助金额:$1.0万
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财政年份:1997
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负责人:George Rozgonyi
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依托单位:
The Influence of in situ Photoexcitation and Electric Field on Ion Implantation Damage Accumulation in Silicon
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批准号:9628695
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项目类别:Standard Grant
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资助金额:$43.07万
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财政年份:1996
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负责人:George Rozgonyi
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依托单位:
The Influence of In-Situ Photoexcitation and Electric Field on Ion Implantation Damage Accumulation in Silicon
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批准号:9215538
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项目类别:Continuing Grant
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资助金额:$32.96万
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财政年份:1993
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负责人:George Rozgonyi
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依托单位:
海外基金