The Influence of in situ Photoexcitation and Electric Field on Ion Implantation Damage Accumulation in Silicon

原位光激发和电场对硅中离子注入损伤累积的影响

• 批准号: 9628695
• 负责人: George Rozgonyi
• 金额: $ 43.07万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-15 至 1999-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9628695&HistoricalAwards=false
• 关键词: Influence; situ; Photoexcitation; Electric; Field

9628695 Rozgonyi This research project is a collaborative effort between researchers at NCSU and Oak Ridge National Labs(ORNL) to study fundamental mechanisms and phenomena associated with radiation-produced defects in silicon, and the complex interactions that control defect formation, diffusion and annihilation. The project will investigate the effects of in situ changes to the electronic state of semiconductors by photoexcitation and/or internal electric fields on damage accumulation processes. In situ measurement of specific defect levels in ion implanted silicon will be made by deep level transient spectroscopy(DLTS). Ion flux and temperature variations, as well as in situ photoexcitation during implantation coupled with in situ DLTS measurements will be used to elucidate specific mechanisms of defect formation and reaction in silicon with extension of these studies to GaAs, GaN, and SiC anticipated. %%% The research will contribute basic materials science knowledge at a fundamental level of technological relevance to advanced electronic materials processing. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and processing advanced materials and devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9628695 Rozgonyi这项研究项目是美国国立大学和橡树岭国家实验室的研究人员合作开展的，旨在研究与硅中辐射产生的缺陷相关的基本机制和现象，以及控制缺陷形成、扩散和湮灭的复杂相互作用。该项目将调查通过光激和/或内部电场对半导体电子态的原位变化对损伤累积过程的影响。离子注入硅中的特定缺陷能级将用深能级瞬变光谱(DLTS)进行原位测量。离子通量和温度的变化，以及注入过程中的原位光激发，结合原位DLTS测量，将被用来阐明硅中缺陷形成和反应的具体机制，这些研究预计将扩展到GaAs，GaN和SiCe。这项研究将在与先进电子材料加工技术相关的基础水平上贡献基本的材料科学知识。此外，从这项研究项目中获得的知识和理解有望通过为设计和加工先进材料和器件提供基本的理解和基础，从而在总体上为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***