Hot Tunneling Microscopy Study of Epitaxial Growth of Silicon and Germanium on Silicon (100)

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9222493 Ganz Fundamental aspects of molecular beam epitaxy of silicon, germanium/silicon, and details of surface diffusion of atoms will be studied using hot scanning tunneling microscopy. The instrumentation used and experimental approach followed will allow atomic resolution imaging and electron diffraction to be measured during the crystal growth process. The effects of temperature on the kinetics of film growth, as well as direct determination of important growth parameters including anisotropic diffusion, coarsening, binding energies, step velocity, and diffusion across or reflection from step edges will be studied. These parameters are to be investigated for silicon homoepitaxial growth on Si(100) substrates, and for Ge heteroepitaxial growth on Si(100) with Sb as a surfactant. %%% This research is expected to provide fundamental new information about semiconductor materials which are widely used for VLSI technology. State-of-the-art surface instrumentation and methods are expected to reveal atomic scale features of surface interactions in real time as reactions occur. The semiconductor materials under study have wide applicability in electronic and optoelectronic devices, and a greater understanding of their primary materials science properties is expected to improve the performance of devices made from these materials. New devices and device configurations may result from these studies as well as significant improvements in devices and integrated circuits currently used in computing, information processing, and telecommunications. ***