Electrical and Structural Characterization of Nanowires and Nanodevices

本项目的目标是制造新的纳米器件并研究电输运特性。该方法涉及使用隧道显微镜（STM）与原子氢抗蚀剂，以提供高分辨率。氢终止（钝化）区域和裸露（反应性）Si表面区域之间的化学反应性的差异在吸附和生长过程中提供了高选择性。 预计特征尺寸小于3 nm。STM将被用来制造和成像纳米线与原子分辨率。一维纳米线和纳米盒将被制造和原位研究其电输运性质。此外，这些纳米光刻制造技术允许创建具有单个分子作为有源元件的设备。STM将用于在制造期间以原子分辨率对器件进行成像。还将制造分子纳米器件，并原位研究其电输运特性;衬底将提供独立的栅极接触。本课程将探讨奈米结构、分子轨道、电性与接触间的关系。该项目涉及材料科学专题领域的基础研究问题，具有很高的潜在技术相关性。这些研究有望提高我们对未来可能的纳米器件/晶体管技术的基本理解。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

The goal of this project is to fabricate new nanoscale devices and to study electrical transport properties. The approach involves the use of tunneling microscopy(STM) with an atomic hydrogen resist to provide high resolution. The difference in chemical reactivity between hydrogen terminated (passivated) areas and bare (reactive) Si surface areas provides high selectivity in adsorption and growth processes. Feature sizes less than 3 nm are anticipated. The STM will be used to fabricate and image nanowires with atomic resolution. 1D nanowires and nanoboxes will be fabricated and their electrical transport properties studied in situ. Additionally, these nanolithographic fabrication techniques allow the creation of devices with a single molecule as the active element. STM will be used to image devices during fabrication with atomic resolution. Molecular nanodevices will also be fabricated and their electrical transport properties studied in situ; substrate will provide an independent gate contact. The relationship between nanometer structure, molecular orbitals, electrical properties, and contacts will be investigated.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The studies are expected to improve our fundamental understanding of possible future nanodevice/transistor technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***