Electrical and Structural Characterization of Nanowires and Nanodevices

纳米线和纳米器件的电气和结构表征

• 批准号: 9980295
• 负责人: Eric Ganz
• 金额: $ 36万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-02-01 至 2003-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9980295&HistoricalAwards=false
• 关键词: Electrical; Structural; Characterization; Nanowires; Nanodevices

The goal of this project is to fabricate new nanoscale devices and to study electrical transport properties. The approach involves the use of tunneling microscopy(STM) with an atomic hydrogen resist to provide high resolution. The difference in chemical reactivity between hydrogen terminated (passivated) areas and bare (reactive) Si surface areas provides high selectivity in adsorption and growth processes. Feature sizes less than 3 nm are anticipated. The STM will be used to fabricate and image nanowires with atomic resolution. 1D nanowires and nanoboxes will be fabricated and their electrical transport properties studied in situ. Additionally, these nanolithographic fabrication techniques allow the creation of devices with a single molecule as the active element. STM will be used to image devices during fabrication with atomic resolution. Molecular nanodevices will also be fabricated and their electrical transport properties studied in situ; substrate will provide an independent gate contact. The relationship between nanometer structure, molecular orbitals, electrical properties, and contacts will be investigated.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The studies are expected to improve our fundamental understanding of possible future nanodevice/transistor technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

该项目的目标是制造新的纳米级器件，并研究其电输运特性。这种方法包括使用隧道显微镜(STM)和原子氢抗蚀剂来提供高分辨率。氢端(钝化)区和裸(反应性)硅表面区之间的化学反应性差异提供了在吸附和生长过程中的高选择性。预计特征尺寸将小于3纳米。扫描隧道显微镜将用于制造原子分辨率的纳米线并对其成像。将制作一维纳米线和纳米盒，并原位研究其电输运特性。此外，这些纳米光刻制造技术允许创建以单个分子作为活性元素的器件。STM将用于在制造过程中以原子分辨率对器件进行成像。还将制作分子纳米器件，并在现场研究其电输运特性；衬底将提供独立的栅极接触。将研究纳米结构、分子轨道、电学性质和接触之间的关系。%该项目解决了材料科学中具有高潜在技术相关性的热门领域的基础研究问题。这些研究有望提高我们对未来可能的纳米器件/晶体管技术的基本理解。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***