In Situ Scanning Tunneling Microscopy Studies of Ultra High Vacuum Deposition Chemical Vapor Deposition Growth of Aluminum on Silicon (001)

硅上超高真空沉积化学气相沉积生长铝的原位扫描隧道显微镜研究 (001)

• 批准号: 9508637
• 负责人: Eric Ganz
• 金额: $ 23.6万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-15 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9508637&HistoricalAwards=false
• 关键词: Situ; Scanning; Tunneling; Microscopy; Studies

9508637 Ganz A recently developed high speed scanning tunneling microscope (STM) will be used to study chemical vapor deposition (CVD) growth and diffusion processes on silicon surfaces in ultrahigh vacuum (UHV). The surfaces will be imaged with atomic resolution in situ before, during, and after growth at temperatures ranging from room temperature to 800 K. This instrument operates roughly 30 times faster than conventional instruments, at scan rates up to 100,000 /s which allows the study of CVD processes with atomic resolution on time scales down to 10 ms. The project will address three general aspects of Al CVD on silicon: the growth of Al using the precursor, dimethylethylamine alane (DMEAA); surface mass diffusion of the deposited material; and selective area growth of Al on clean and patterned silicon surfaces. The selectivity of growth will be tested on clean surfaces with small metal islands, and also using features drawn into a monohydride resist layer. The ability to remove hydrogen, atom by atom, from hydrogenated silicon surfaces using the STM tip coupled with selective growth of Al on unexposed areas allows basic studies of nanoscale fabrication, in addition to the investigation of fundamental nucleation and growth phenomena associated with CVD. %%% A high speed scanning tunneling microscope (STM) has recently been developed and will be used for basic research studies of the growth and diffusion of aluminum on silicon, a process important to the fabrication of advanced microelectronic devices and circuits. The ultrafast STM technology will be studied further as part of the research, and tested for possible use in the definition and delineation of ultrafine device and circuit patterns. This technology is also being considered for applications in the fabrication of high density memory media. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. The knowledge and und erstanding gained from this research project is expected to contribute generally to improving the performance of existing, and the creation of new, more advanced devices used in computing, information storage and processing, and telecommunications. ***

9508637 Ganz最近开发的高速扫描隧道显微镜（STM）将用于研究在超高真空（UHV）中硅表面上的化学气相沉积（CVD）生长和扩散过程。 在生长之前、期间和之后，在从室温到800 K的温度范围内，表面将以原子分辨率原位成像。 该仪器的运行速度比传统仪器快约30倍，扫描速率高达100，000/s，这使得研究CVD过程的原子分辨率的时间尺度下降到10毫秒。该项目将解决三个一般方面的铝CVD硅：铝的生长使用前体，二甲基乙胺铝烷（DMEAA）;表面质量扩散的沉积材料;以及在清洁和图案化的硅表面上选择性区域生长Al。 生长的选择性将在具有小金属岛的清洁表面上进行测试，并且还使用绘制成单氢化物抗蚀剂层的特征。 从氢化硅表面去除氢的能力，原子，使用STM尖端加上选择性生长的Al在未暴露的区域允许纳米级制造的基础研究，除了与CVD相关的基本成核和生长现象的调查。 一台高速扫描隧道显微镜（STM）最近已经研制成功，并将用于硅上铝的生长和扩散的基础研究，这是制造先进微电子器件和电路的一个重要过程。超快STM技术将作为研究的一部分进行进一步研究，并测试其在超细器件和电路图案的定义和描绘中的可能用途。该技术也被考虑用于制造高密度存储介质。此外，该计划的一个重要特点是在一个基本的和技术上重要的领域培养研究生和本科生。 从这个研究项目中获得的知识和理解，预计将有助于提高现有的性能，并创造新的，更先进的设备，用于计算，信息存储和处理，和电信。***