Diffusion and Growth on Silicon using an Atom Tracker and Hot STM (Scanning Tunneling Microscope)
Diffusion and Growth on Silicon using an Atom Tracker and Hot STM (Scanning Tunneling Microscope)
批准号:
9614125
负责人:
Eric Ganz
金额:
$27.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-01-01 至 1999-12-31
中文摘要
9614125甘茨这个研究项目旨在更好地了解半导体材料的薄膜外延的原子水平。利用原子跟踪器的新研究被提议用于原子分辨率扩散的研究,其速度比以前隧道显微镜可能的速度快100到1000倍。这些研究将被并入PI在高温下使用隧道显微镜对硅表面成核和生长的现有研究。原子跟踪器的结果将与传统的高分辨率室温STM图像和高温STM电影研究相联系,以增强和量化对Si(001)表面扩散和生长的了解。该项目是一个多学科的项目,将材料物理学与材料合成和加工研究相结合,包括先进的表征工具和分析方法,以解决具有高度技术相关性的主题领域的前沿研究问题。这项研究将在基础水平上为电子/光子器件和集成电路的加工和制造的重要方面贡献基本的材料科学知识。此外,从这项研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础,从而在总体上为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训,将研究和教育结合起来。***
英文摘要
9614125 Ganz This research project aims for greater atomic level understanding of thin film epitaxy of semiconductor materials. New investigations utilizing an atom tracker are proposed for atomic resolution studies of diffusion at speeds 100 to 1000 times faster than previously possible with tunneling microscopy. These studies will be incorporated into existing studies by the PI of nucleation and growth on silicon surfaces using tunneling microscopy at elevated temperatures. The atom tracker results will be linked to conventional high resolution room temperature STM images and high temperature STM movie studies to enhance and quantify understanding of diffusion and growth on the Si(001) surface. %%% The project is multidisciplinary combining materials physics with materials synthesis and processing studies including advanced characterization tools and analysis methods to address forefront research issues in a topical area of high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of processing and fabricating electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***
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批准号:9980295
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财政年份:2000
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负责人:Eric Ganz
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