Diffusion and Growth on Silicon using an Atom Tracker and Hot STM (Scanning Tunneling Microscope)

使用原子跟踪器和热 STM（扫描隧道显微镜）在硅上进行扩散和生长

• 批准号: 9614125
• 负责人: Eric Ganz
• 金额: $ 27万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1999-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9614125&HistoricalAwards=false
• 关键词: Diffusion; Growth; Silicon; using; Atom

9614125 Ganz This research project aims for greater atomic level understanding of thin film epitaxy of semiconductor materials. New investigations utilizing an atom tracker are proposed for atomic resolution studies of diffusion at speeds 100 to 1000 times faster than previously possible with tunneling microscopy. These studies will be incorporated into existing studies by the PI of nucleation and growth on silicon surfaces using tunneling microscopy at elevated temperatures. The atom tracker results will be linked to conventional high resolution room temperature STM images and high temperature STM movie studies to enhance and quantify understanding of diffusion and growth on the Si(001) surface. %%% The project is multidisciplinary combining materials physics with materials synthesis and processing studies including advanced characterization tools and analysis methods to address forefront research issues in a topical area of high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of processing and fabricating electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

这个研究项目旨在提高对半导体材料薄膜外延的原子水平的理解。利用原子跟踪器的新研究提出了扩散的原子分辨率研究，速度比以前可能的隧道显微镜快100到1000倍。这些研究将被纳入PI在高温下使用隧道显微镜对硅表面成核和生长的现有研究中。原子跟踪结果将与传统的高分辨率室温STM图像和高温STM薄膜研究相关联，以增强和量化对Si（001）表面扩散和生长的理解。该项目是多学科结合材料物理学与材料合成和加工研究，包括先进的表征工具和分析方法，以解决高科技相关主题领域的前沿研究问题。该研究将为电子/光子器件和集成电路的加工和制造的重要方面提供基础材料科学知识。此外，从本研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而为提高先进设备和电路的性能做出贡献。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊