Diffusion and Growth on Silicon using an Atom Tracker and Hot STM (Scanning Tunneling Microscope)
Diffusion and Growth on Silicon using an Atom Tracker and Hot STM (Scanning Tunneling Microscope)
批准号:
9614125
负责人:
Eric Ganz
金额:
$27.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-01-01 至 1999-12-31
中文摘要
9614125 Ganz本研究项目旨在更大的半导体材料薄膜外延的原子水平的理解。 利用原子跟踪器的新调查提出了原子分辨率的扩散研究速度比以前可能的隧道显微镜快100至1000倍。 这些研究将被纳入现有的研究,通过PI的成核和生长在硅表面上使用隧道显微镜在高温下。原子跟踪器的结果将与传统的高分辨率室温STM图像和高温STM电影研究相关联,以增强和量化对Si(001)表面上扩散和生长的理解。该项目是多学科结合材料物理与材料合成和加工研究,包括先进的表征工具和分析方法,以解决高技术相关性的热门领域的前沿研究问题。 该研究将在基础层面上为处理和制造电子/光子器件和集成电路的重要方面提供基础材料科学知识。 此外,从该研究项目中获得的知识和理解预计将通过提供设计和生产改进材料和材料组合的基本理解和基础,以提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***
英文摘要
9614125 Ganz This research project aims for greater atomic level understanding of thin film epitaxy of semiconductor materials. New investigations utilizing an atom tracker are proposed for atomic resolution studies of diffusion at speeds 100 to 1000 times faster than previously possible with tunneling microscopy. These studies will be incorporated into existing studies by the PI of nucleation and growth on silicon surfaces using tunneling microscopy at elevated temperatures. The atom tracker results will be linked to conventional high resolution room temperature STM images and high temperature STM movie studies to enhance and quantify understanding of diffusion and growth on the Si(001) surface. %%% The project is multidisciplinary combining materials physics with materials synthesis and processing studies including advanced characterization tools and analysis methods to address forefront research issues in a topical area of high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of processing and fabricating electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***
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会议论文
Electrical and Structural Characterization of Nanowires and Nanodevices
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批准号:9980295
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项目类别:Continuing Grant
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资助金额:$36.0万
-
财政年份:2000
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负责人:Eric Ganz
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依托单位:
In Situ Scanning Tunneling Microscopy Studies of Ultra High Vacuum Deposition Chemical Vapor Deposition Growth of Aluminum on Silicon (001)
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批准号:9508637
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资助金额:$23.6万
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财政年份:1995
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负责人:Eric Ganz
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依托单位:
Development of an Ultrafast Scanning Tunneling Microscope
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批准号:9300729
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项目类别:Standard Grant
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资助金额:$9.7万
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财政年份:1993
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负责人:Eric Ganz
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依托单位:
Hot Tunneling Microscopy Study of Epitaxial Growth of Silicon and Germanium on Silicon (100)
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批准号:9222493
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项目类别:Continuing Grant
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资助金额:$25.2万
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财政年份:1993
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负责人:Eric Ganz
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批准号:2024Y9049
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负责人:滕冰
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依托单位: