U.S.-Germany Cooperative Research on the Dynamic Conductivity of Lateral Superlattices

9222876 Merz该奖项支持一组年轻的美国科学家和工程师参与欧洲区域合作，研究半导体量子结构的电子特性。 美国方面的技术协调员是位于圣巴巴拉的加州大学量子化电子结构科学技术中心（QUEST）主任詹姆斯·默茨教授。参与这项拟议研究的美国高级研究人员是H. Kroemer和P. Petroff;然而，这个NSF奖项资助的工程师是学生，博士后研究人员和QUEST附属的新教师。 与QUEST小组合作最多的欧洲小组由德国慕尼黑路德维希-马克西米利安大学物理系的J. P. Kotthaus教授领导。 他们的工作是与几个欧洲合作伙伴的区域努力的一部分，由ESPRIT基础研究计划资助。 参与的美国和德国工程师将基于III-V族半导体量子结构制造三种不同的横向超晶格系统，然后通过低温和高磁场下的动态电导率实验研究它们的特定电子特性。 该美国小组通过分子束外延生长和聚焦离子束构图，在这些结构的概念和制造方面提供专业知识。这家德国集团还拥有非常强大的制造能力，在半导体纳米结构的光刻加工方面拥有特别的专业知识。 此外，德国集团还拥有专门的设备，用于详细分析联合制造结构的电子特性。 通过结合他们的专业知识和专业设施，他们将能够优化制造技术，并更好地评估哪种类型的超晶格提供最佳的高频器件性能。 此外，两个小组之间计划的初级研究人员交流将使他们有机会在设备和实力与自己不同的顶级飞行实验室工作。 他们还将深入了解另一个国家的研究实践，并与潜在的专业同事进行早期接触。 ***

9222876 Merz This award supports the participation of a group of young American scientists and engineers in a regional European collaboration investigating the electronic properties of semiconductor quantum structures. The technical coordinator for the U.S. side of the linked effort is Professor James Merz, Director of the Science and Technology Center for Quantized Electronic Structures (QUEST) at the University of California, Santa Barbara. The senior U.S. participants in the proposed research are Professors H. Kroemer and P. Petroff of UCSB; however, the engineers to be funded by this NSF award are students, postdoctoral researchers and new faculty affiliated with QUEST. The European group most involved in collaborating with the QUEST group is led by Professor J. P. Kotthaus of the Physics Section of the Ludwig-Maximilians-University in Munich, Germany. Their work is part of a regional effort with several European partners which is funded by the ESPRIT Basic Research Program. The participating U.S. and German engineers will produce three distinct lateral superlattice systems based on III-V semiconductor quantum structures and then investigate their specific electronic properties via dynamic conductivity experiments at low temperatures and in high magnetic fields. The U.S. group contributes expertise in the conception and fabrication of these structures by growth with molecular beam epitaxy and patterning with focused ion beam. The German group also has very strong fabrication capabilities with particular expertise in lithographic processing for semiconductor nanostructures. In addition, the German group has specialized equipment for detailed analysis of the electronic properties of the jointly fabricated structures. By combining their expertise and specialized facilities, they will be able to optimize the fabrication technologies and better assess which types of superlattices offer the best high-frequency device performance. In addition, the planned exchanges of junior researcher s between the two groups will give them the opportunity to work in a top flight laboratory with equipment and strengths different from their own. They will also gain insights into the practice of research in another country and make some early contacts with potential professional colleagues. ***