The Dynamics of Metal Film Growth by Metal Organic Chemical Vapor Deposition
The Dynamics of Metal Film Growth by Metal Organic Chemical Vapor Deposition
批准号:
9306899
负责人:
Eric Garfunkel
金额:
$21.2万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-08-01 至 1997-01-31
中文摘要
小行星9306899 本计画的目的是了解金属有机化学气相沈积(MOCVD)制程在表面上的基本金属覆层成长动力学。 这项研究包括检查的机制参与热解沉积的过渡金属薄膜从羰基M(CO)x和三氟膦M(PF3)x前体Si,Ni和薄膜SiO2。 将解决的具体问题是:一)有机金属前体如何相互作用,并在不同的基板上分解?ii)在金属薄膜的生长过程中会出现什么样的微观结构,它们是如何演变的?iii)可以预测哪种前体适合于期望的金属化工艺吗?金属膜生长的微观结构将主要研究通过扫描隧道显微镜(STM),和分解机制和热化学的振动(HREELS),组成(XPS和AES),和解吸(TDS)光谱的组合。 MOCVD结果将与通过物理气相沉积(PVD)方法获得的结果进行比较。 这项工作的微观结构和热化学的结果应大大增加MOCVD科学的理解和各种先进材料的应用,利用薄金属膜。 ***
英文摘要
9306899 Garfunkel The purpose of this project is to understand the basic metal overlayer growth dynamics of metal organic chemical vapor deposition (MOCVD) processes on surfaces. This research includes an examination of the mechanisms involved in the pyrolytic deposition of transition metal films from carbonyl M(CO)x and trifluorophosphine M(PF3)x precursors on Si, Ni, and thin film SiO2. Specific issues that will be addressed are: i) How do organometallic precursors interact and decompose on different substrates? ii) What microscopic structures occur and how do they evolve during the growth of thin metal films? iii) Can one predict which precursor would be appropriate for a desired metallization process? The metal film growth microstructures will be studied primarily by scanning tunneling microscopy (STM), and the decomposition mechanism and thermochemistry by a combination of vibrational (HREELS), compositional (XPS and AES), and desorption (TDS) spectroscopies. MOCVD results will be compared with those obtained by physical vapor deposition (PVD) methods. Both the microstructural and thermochemical results of this work should add significantly to the understanding of the science of MOCVD and to the variety of advanced materials applications which utilize thin metal films. ***
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Eleventh African Materials Research Society (A-MRS) Conference
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批准号:2234941
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项目类别:Standard Grant
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资助金额:$4.9万
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财政年份:2022
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负责人:Eric Garfunkel
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依托单位:
10th African Materials Research Society (A-MRS) Conference 2019
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批准号:1951292
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项目类别:Standard Grant
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资助金额:$4.9万
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财政年份:2019
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负责人:Eric Garfunkel
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依托单位:
CONFERENCE: 9th African Materials Research Society (A-MRS) Conference 2017
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批准号:1748321
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项目类别:Standard Grant
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资助金额:$4.5万
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财政年份:2017
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负责人:Eric Garfunkel
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依托单位:
8th African Materials Research Society Conference
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批准号:1601870
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项目类别:Standard Grant
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资助金额:$4.5万
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财政年份:2015
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负责人:Eric Garfunkel
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依托单位:
7th Africa Materials Research Society (A-MRS) Conference
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批准号:1402621
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项目类别:Standard Grant
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资助金额:$4.0万
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财政年份:2013
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负责人:Eric Garfunkel
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依托单位:
Acquisition of a Solid State NMR Instrument at Rutgers University for Research and Teaching Activities in New Jersey Area
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批准号:0947046
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项目类别:Standard Grant
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资助金额:$33.29万
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财政年份:2010
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负责人:Eric Garfunkel
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依托单位:
Interface Chemistry for Nanoscale Devices
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批准号:1006740
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项目类别:Continuing Grant
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资助金额:$39.14万
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财政年份:2010
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负责人:Eric Garfunkel
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依托单位:
Support for Conference on Defects in Nanoelectronic Materials; St. Petersburg, Russia
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批准号:0532142
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项目类别:Standard Grant
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资助金额:$0.5万
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财政年份:2005
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负责人:Eric Garfunkel
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依托单位:
The Chemistry of Inorganic Nanoelectronic Interfaces
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批准号:0518345
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项目类别:Continuing Grant
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资助金额:$33.6万
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财政年份:2005
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负责人:Eric Garfunkel
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依托单位:
Acquisition of a Variable Temperature Scanning Probe Microscope for Research and Education
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批准号:0076459
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项目类别:Standard Grant
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资助金额:$15.1万
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财政年份:2000
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负责人:Eric Garfunkel
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依托单位:
An Investigation of Ultrathin SiO2 Films on Si: Gate Oxide Growth, Microstructure and Electronic Properties
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批准号:9530984
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项目类别:Continuing Grant
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资助金额:$29.01万
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财政年份:1996
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负责人:Eric Garfunkel
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依托单位:
Modification of Metal and Semiconductor Surfaces by Ion Implantation: Potentials for Catalysis
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批准号:8617717
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项目类别:Continuing Grant
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资助金额:$22.95万
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财政年份:1987
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负责人:Eric Garfunkel
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依托单位:
国内基金
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