Support for Conference on Defects in Nanoelectronic Materials; St. Petersburg, Russia

支持纳米电子材料缺陷会议；

• 批准号: 0532142
• 负责人: Eric Garfunkel
• 金额: $ 0.5万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-07-15 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0532142&HistoricalAwards=false
• 关键词: Support; Conference; Defects; Nanoelectronic; Materials

Technical. A workshop to address defects in advanced high-k dielectrics will be held in St. Petersburg, Russia, July 11 -14, 2005. The workshop provides a timely forum for researchers to examine the complex scientific and technological issues that pertain to the use of advanced high-k materials in next generation semiconductor devices. A unique feature of the workshop is a special focus on defects in these materials. Intellectual merit: Conventional SiO2/Si-based MOSFET's are approaching the fundamental limit of scaling. Below 1 nm in gate dielectric thickness, leakage currents degrade dielectric performance and reliability, preventing practical use for conventional SiO2. It is thought that a feasible solution to the gate oxide scaling problem may be to replace SiO2 with novel high permittivity (high-k) gate dielectric materials. Despite significant progress achieved in this area of research, high-k materials are still satisfactory in the gate stack. The key obstacles to high-k integration into Si nano-technology appear to be electronic defects. However, little is known about the atomic scale nature of the defects or about possible techniques to eliminate, or to minimize them. Non-technical. The requested funds will be used to support students, women, minorities and young scientists to attend the Workshop. Participating in the conference is expected to increase their knowledge of the field and help them bring back to the U.S. new ideas and results from leading laboratories in Europe and elsewhere in the world. It will also help these and other U.S. participants to identify priority directions for future research in the field. Conference results/papers will be published as a book by Springer-Verlag by the end of the year. The website for the workshop is: http://www.ioffe.ru/natoarw/2005/info.html . The workshop is co-funded by MPS/DMR and OISE.

技术. 2005年7月11日至14日，将在俄罗斯圣彼得堡彼得堡举行一次研讨会，讨论先进高k超导体的缺陷。研讨会为研究人员提供了一个及时的论坛，以研究与下一代半导体器件中使用先进的高k材料有关的复杂科学和技术问题。该研讨会的一个独特之处是特别关注这些材料中的缺陷。知识价值：传统的SiO2/Si基MOSFET正在接近缩放的基本极限。栅极电介质厚度低于1 nm时，漏电流会降低电介质性能和可靠性，从而阻止常规SiO2的实际使用。据认为，一个可行的解决方案的栅极氧化物的缩放问题可能是取代SiO2与新的高介电常数（高k）栅极电介质材料。尽管在这一研究领域取得了重大进展，但高k材料在栅极叠层中仍然令人满意。高k集成到Si纳米技术的关键障碍似乎是电子缺陷。然而，人们对缺陷的原子尺度性质或消除或最小化它们的可能技术知之甚少。非技术性的。申请的资金将用于支持学生、妇女、少数群体和青年科学家参加讲习班。参加会议预计将增加他们对该领域的知识，并帮助他们将欧洲和世界其他地方领先实验室的新想法和成果带回美国。它还将帮助这些和其他美国参与者确定该领域未来研究的优先方向。会议成果/论文将在年底前由Springer-Verlag出版社出版。讲习班的网址是：http://www.ioffe.ru/natoarw/2005/info.html。该讲习班由MPS/DMR和OISE共同资助。