The Chemistry of Inorganic Nanoelectronic Interfaces

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AbstractCHE-0518345Garfunkel/RutgersWith the support of the Analytical and Surface Chemistry Program, Professor Garfunkel and his collaborators in the Department of Chemistry at Rutgers University are examining inorganic interfacial chemistry of importance to nanoelectronic devices. The interface between semiconductor materials and high dielectric constant insulators, and the interface between metals and these high dielectric insulators is the focus of this research project. Photoemission, inverse photoemission, scanning probe microscopy and ion scattering methods are all used to characterize the interface between semiconductors or metals and high dielectric oxides such as HfO2, Al2O3, or Gd2O3. Fundamental understanding gained from this work allows the push to even smaller silicon based electronic devices. An understanding of the interfacial chemistry in ultra small scale electronic devices is crucial to the design and production of smaller and smaller electronic chips. Professor Garfunkel and his colleagues at Rutgers are using modern surface science methods to obtain a fundamental understanding of this interfacial chemistry involving high dielectric constant materials. The results of this work will strongly impact the semiconductor industry's next generation designs.