Ballistic Electron Emission Spectroscopy and Microscopy Studies of Heterojunction Band Offsets and Local Electronic Transport

异质结能带偏移和局部电子输运的弹道电子发射光谱和显微镜研究

• 批准号: 9531133
• 负责人: Venkatesh Narayanamurti
• 金额: $ 31.59万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-04-01 至 1998-12-24
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9531133&HistoricalAwards=false
• 关键词: Ballistic; Electron; Emission; Spectroscopy; Microscopy

9531133 Narayanamurti A unique, variable temperature, Ballistic Electron Emission Microscope (BEEM) recently developed at Santa Barbara will be used to perform the first spatial studies of local electronic band structure and transport of novel compound semiconductor heterostructures and quantum wells in GaInP/GaAs and A1GaN/GaN. Both of these materials systems have great technological importance for optoelectronic devices, and there is a strong electronic materials and device effort at UCSB in this area. Yet the fundamental knowledge of important electronic parameters, such as heterjunction band offsets, is either poorly understood (GaInP\GaAs) or unknown (A1GaN/GaN). Initial BEEM studies at UCSB in the prototypical A1xG1-xAs/GaAs system have very recently shown the power of BEEM to perform spectroscopy of semiconductor heterostructures buried spatially below the Schottky barrier and gives us confidence in the potential of the technique for probing new materials systems Such studies using BEEM have never been done before. It is anticipated that the results of this undertaking will yield a concrete body of invaluable information which will lead to understanding of transport in quantum heterostructures, and will enable the characterization of technologically important (and heretofore poorly understood) semiconductor materials on a local scale. ***

9531133 Narayanamurti最近在圣巴巴拉开发的一种独特的变温弹道电子发射显微镜(BEEM)将用于首次空间研究GaInP/GaAs和AlGaN/GaN中新型化合物半导体异质结和量子阱的局域电子能带结构和输运。这两种材料系统对光电子器件都具有重要的技术意义，UCSB在这一领域进行了强有力的电子材料和器件努力。然而，重要的电子参数的基本知识，如异质结能带偏移，要么鲜为人知(GaInP\GaN)，要么未知(AlGaN/GaN)。UCSB在典型的A1xG1-xAs/GaAs系统中的初步BEEM研究最近显示了BEEM的能力，可以对埋在肖特基势垒下的半导体异质结构进行光谱测量，并使我们对这种技术在探索新材料体系方面的潜力充满信心，这种研究以前从未用过。预计这项工作的结果将产生大量宝贵的具体信息，这些信息将有助于理解量子异质结构中的输运，并将能够在局部范围内表征具有重要技术意义(迄今知之甚少)的半导体材料。***