Semiconductor Device Modeling, Numerical Methods and Simulations

这项建议是美国国家科学基金会资助的ECS-9627849研究的继续。其目的是研究用于半导体器件模拟的建模、数学分析，特别是新颖、可靠和高效的数值方法。重点分析和模拟了最近发展起来的无能量输运和有能量输运的高场模型、流体动力学模型、动力学模型、能量输运模型、量子相关模型以及与麦克斯韦方程耦合的光电子器件模型。将同时考虑时间精确模型和数值方法以及稳态解。将保持与设备物理学家、工程师和应用数学家的合作和交流，从物理、数学和数值角度研究设备模拟问题。

This proposal is a continuation of the research supported by NSF Grant ECS-9627849. The objective is to study the modeling, mathematical analysis, and in particular novel, reliable and efficient numerical methods for semiconductor device simulations. The emphasis of the proposed effort will be on the analysis and simulation of the recently developed high field (HF) models without and with energy transport, the hydroynamic (HD) models, the kinetic models, the energy transport, (ET) models, the quantum related models, and optoelectronic device models involving the coupling with the Maxwell equations. Both time accurate models and numerical methods and steady state solutions will be considered. Collaborations and communications with device physicists, engineers, and applied mathematicians, will be maintained, to investigate device simulation problems from physical, mathematical, and numerical points of view.