Semiconductor Device Modeling, Numerical Methods and Simulations

该提案是NSF Grant ECS-9627849支持的研究的延续。 目标是研究半导体器件模拟的建模、数学分析，特别是新颖、可靠和有效的数值方法。 建议的努力的重点将是最近开发的高场（HF）模型的分析和模拟没有和能量传输，流体动力学（HD）模型，动力学模型，能量传输，（ET）模型，量子相关的模型，和光电器件模型涉及耦合与麦克斯韦方程。 时间精确模型和数值方法和稳态解都将被考虑。 将保持与设备物理学家、工程师和应用数学家的合作和沟通，从物理、数学和数值的角度研究设备模拟问题。

This proposal is a continuation of the research supported by NSF Grant ECS-9627849. The objective is to study the modeling, mathematical analysis, and in particular novel, reliable and efficient numerical methods for semiconductor device simulations. The emphasis of the proposed effort will be on the analysis and simulation of the recently developed high field (HF) models without and with energy transport, the hydroynamic (HD) models, the kinetic models, the energy transport, (ET) models, the quantum related models, and optoelectronic device models involving the coupling with the Maxwell equations. Both time accurate models and numerical methods and steady state solutions will be considered. Collaborations and communications with device physicists, engineers, and applied mathematicians, will be maintained, to investigate device simulation problems from physical, mathematical, and numerical points of view.