Millimeter Wave Semiconductor Device Characterization and Modeling Framework for Holistic Design of Novel 5G Wireless RF Devices

用于新型 5G 无线射频器件整体设计的毫米波半导体器件表征和建模框架

• 批准号: 463036-2014
• 负责人: Boumaiza, Slim
• 金额: $ 10.91万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2015
• 资助国家: 加拿大
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=577010
• 关键词: Millimeter; Wave; Semiconductor; Device; Characterization

By 2020, mobile communication traffic is expected to increase 1,000 times from current levels with over 50 billion devices equipped with digital sensing, communication and processing capabilities to enable the "Internet of Things." In this digital society, there will be a need for new wireless access technologies (referred to as 5G) to support the deployment of hyper-connected information communication technology (ICT) solutions. 5G will enable access to information anywhere, at any time, by anyone, from anything. 5G technology outcomes will transcend traditional applications such as mobile wireless communication, to underpin a vast array of applications that will impact Canadians socially and economically. 5G will require radically different paradigms for developing low cost and power efficient wireless transceivers; more particularly the underlying transmitters and power amplifiers (PA) for mobile devices, access and backhaul infrastructure, and network topologies. Distinctive challenges face the development of 5G technology including wide bandwidth, high operating frequencies and heterogeneous and ad-hoc networks. However, these challenges offer excellent opportunities for academia and industry to investigate new approaches to creating energy efficient 5G transceivers and PA architectures. Solving these challenges will translate into a share of the 5G market and the resultant economic returns but will require accurate modeling of the nonlinear mechanisms and dynamic properties of semiconductor devices at millimeter wave (mm-wave) frequencies. This project will establish a mm-wave semiconductor device characterization and modeling framework for the holistic design of flexible 5G radio frequency (RF) devices; creating efficient "bridges" between device and circuit levels, and between circuit and system levels. It aims to develop physics-based compact and behavioral models capable of accurately predicting semiconductor device behavior at mm-waves. These models will form an integrated electronic design automation backbone to realize RF devices beyond what is possible with contemporary technology.

到2020年，移动通信流量预计将在当前水平的基础上增长1000倍，届时将有超过500亿台设备配备数字传感、通信和处理能力，以实现“物联网”。在这个数字社会中，将需要新的无线接入技术(简称5G)来支持部署超互联信息通信技术(ICT)解决方案。5G将使任何人、任何人、任何人能够随时随地访问信息。5G技术成果将超越移动无线通信等传统应用，为将影响加拿大社会和经济的大量应用奠定基础。 5G将需要完全不同的模式来开发低成本和高能效的无线收发器；尤其是移动设备、接入和回程基础设施以及网络拓扑的底层发射机和功率放大器(PA)。5G技术的发展面临着独特的挑战，包括宽带、高工作频率以及异构性和自组织网络。然而，这些挑战为学术界和工业界提供了绝佳的机会，以研究创建节能5G收发器和PA架构的新方法。解决这些挑战将转化为5G市场的份额和由此产生的经济回报，但将需要对毫米波(毫米波)频率下半导体设备的非线性机制和动态特性进行准确建模。 该项目将为灵活的5G射频(RF)设备的整体设计建立毫米波半导体设备表征和建模框架；在设备和电路级别以及电路和系统级别之间创建高效的“桥梁”。它的目标是开发基于物理的紧凑和行为模型，能够准确地预测半导体器件在毫米波的行为。这些模型将形成一个集成的电子设计自动化主干，以实现超越当代技术可能实现的射频设备。