Study of Carrier Transport and Impact Ionization in GaN/AlGaN

GaN/AlGaN 中载流子传输和碰撞电离的研究

• 批准号: 9408479
• 负责人: P.Paul Ruden
• 金额: $ 12.77万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-03-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9408479&HistoricalAwards=false
• 关键词: Study; Carrier; Transport; Impact; Ionization

9408479 Ruden The purpose of this work is to provide the first theoretical comprehensive study of electron and hole transport in GaN and ALGaN bulk and multiquantum well structures with the specific goal of determining the electron and hole impact ionization rates in these systems. From the knowledge of the transport properties of GaN/ALGaN obtained, the feasibility of developing a p-n junction GaN/AlGaN low-noise ultraviolet avalanching detector can be assessed. To date no compact, low-voltage, solid-state ultraviolet photodetector exists, In order to judge the utility of a GaN/AlGaN avalanche photodiode it is necessary to know the impact ionization rates in these materials. In this work, the electron and hole impact ionization rates will be theoretically determined using ensemble Monte Carlo simulations which include the full details of the conduction and valence bands calculated numerically from the pseudopotential method. A new formulation of the impact ionization transition rates will be included in the Monte Carlo simulators which takes into account the k-dependence of the transition rate providing a first principles determination of the carrier ionization rates. Using this technique, the electron and hole ionization rates will be calculated in bulk GaN, AlGaN and in related multiquantum well and superlattice structures. The calculated results will provide the first assessment of GaN/AlGaN for use in p-n junction APDs for ultraviolet detection. In addition, the refinement of the simulation tools used in this study will have significant impact on modeling other devices. Some possible devices whose design and optimization can be aided by the development of the proposed simulators are low noise, high gain photodetectors for high data rate communications, new APD designs for detection of wavelenghts from the ultraviolet to the infrared, and ultra-low noise IMPATT diodes. This study is a collaboration between researchers at Georgia Institute of Techology and University of Minnesota. ***

这项工作的目的是提供GaN和ALGaN体和多量子阱结构中电子和空穴输运的第一个理论综合研究，具体目标是确定这些系统中的电子和空穴影响电离率。通过对GaN/ALGaN输运性质的了解，可以评估开发p-n结GaN/ALGaN低噪声紫外雪崩探测器的可行性。为了判断GaN/AlGaN雪崩光电二极管的实用性，有必要了解这些材料中的冲击电离率。在这项工作中，电子和空穴碰撞电离率将在理论上使用集合蒙特卡罗模拟来确定，其中包括从伪势方法数值计算的传导带和价带的全部细节。蒙特卡罗模拟器将包含一个新的冲击电离跃迁速率公式，该公式考虑了跃迁速率的k依赖性，提供了确定载流子电离速率的第一性原理。利用该技术，将计算体GaN、AlGaN以及相关的多量子阱和超晶格结构中的电子和空穴电离率。计算结果将首次评估用于紫外检测的p-n结apd的GaN/AlGaN。此外，本研究中使用的仿真工具的改进将对其他设备的建模产生重大影响。一些可能的器件的设计和优化可以通过所提出的模拟器的发展来帮助，包括用于高数据速率通信的低噪声，高增益光电探测器，用于检测从紫外到红外波长的新型APD设计，以及超低噪声IMPATT二极管。这项研究是佐治亚理工学院和明尼苏达大学的研究人员合作进行的。＊＊＊