GOALI: High Field Transport and Device Modeling of Carbon Nanotube Structures

GOALI：碳纳米管结构的高场输运和器件建模

• 批准号: 0243884
• 负责人: P.Paul Ruden
• 金额: $ 27万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-05-15 至 2007-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0243884&HistoricalAwards=false
• 关键词: GOALI; Field; Transport; Device; Modeling

Over the past several decades scaling of MOS transistor technology to smaller dimensions has given rise to a rapid increase in integrated circuit performance. It is however well recognized that continued scaling is limited by quantum phenomena that dominate the characteristics of devices on the nanometer scale, even if the escalating investments can be absorbed successfully. As an eventual alternative to scaling MOS technology, research is directed at new devices and new operational paradigms that are tied to quantum phenomena on the one hand and to nanotechnology on the other. Many parallel paths towards a technology of molecular electronics are being explored. Among the most promising structures in this context are so-called carbon nanotubes (CNTs).The focus of this proposed program is a study of high-field, high-temperature charge carrier transport in CNTs and, building on these results, the formulation and analysis of device models, specifically for CNT-based field effect transistors (CNT-FETs). It is planned to adapt and apply a new Monte Carlo technique that was developed under previous NSF funding. In that earlier work the traditional Monte Carlo paradigm of semiclassical transport theory was generalized to allow for interband tunneling transitions. It is also planned to construct semianalytical CNT-FET models that are suitable for an exploration of realistic device operating conditions.The intellectual merit of the proposed activity includes the advancement of the understanding of high-field charge carrier transport. CNTs are well suited as an example material with the desired flexibility because of the strong dependence of their electronic structure on the tube geometry. This will allow for a direct correlation of bandstructure to transport without adding the complication of having to compare results for chemically different materials. Furthermore, CNT-based devices are excellent candidates for future nanometer scale electronics applications and the proposed program can make significant contributions to a quantitative assessment of these prospects. To ensure that the calculations have maximum relevance for experimental exploration the research will be conducted in close interaction with Dr. Phaedon Avouris and his group at IBM's T.J. Watson Research Center. The proposed program has broader educational impact through the involvement of graduate and undergraduate students in the exciting fields of nano technology and in the collaboration with industrial partners. The lead graduate student at the University of Minnesota will serve as the point of contact for a researcher to be identified in the IBM group. This student will be responsible for accurate and timely exchange of information also between the University of Minnesota and Georgia Tech groups. It has been our experience that the direct involvement of students in this type of interaction gives them an opportunity to display initiative and to set up working relationships with industry that are potentially valuable for their future career. In addition, the PIs have a track record of incorporating their on-going research into classes, off-campus presentations to students, and textbooks. The educational aspect of their research therefore reaches an audience beyond their immediate research groups.

在过去的几十年里，MOS晶体管技术的小型化使得集成电路的性能迅速提高。然而，人们普遍认识到，即使可以成功地吸收不断增加的投资，持续的缩放也受到纳米尺度上主导器件特征的量子现象的限制。作为缩放MOS技术的最终替代方案，研究方向是与量子现象和纳米技术相关的新设备和新操作范例。人们正在探索通往分子电子学技术的许多平行路径。在这方面最有前途的结构是所谓的碳纳米管（CNTs）。该计划的重点是研究碳纳米管中的高场、高温电荷载流子输运，并在这些结果的基础上，制定和分析器件模型，特别是基于碳纳米管的场效应晶体管（cnt - fet）。它计划适应和应用一种新的蒙特卡罗技术，是在以前的NSF资助下开发的。在早期的工作中，半经典输运理论的传统蒙特卡罗范式被推广到允许带间隧穿跃迁。它也计划建立半解析的碳纳米管-场效应管模型，适合于探索实际的设备操作条件。所提出的活动的智力价值包括对高场电荷载流子输运的理解的进步。由于碳纳米管的电子结构强烈依赖于管的几何形状，因此碳纳米管非常适合作为具有所需灵活性的示例材料。这将允许带结构与输运的直接关联，而不必增加比较化学上不同材料的结果的复杂性。此外，基于碳纳米管的器件是未来纳米级电子应用的优秀候选者，所提出的计划可以为这些前景的定量评估做出重大贡献。为了确保计算结果与实验探索有最大的相关性，这项研究将与IBM T.J.沃森研究中心的费登·阿沃里斯博士和他的团队密切合作。该计划通过研究生和本科生在纳米技术领域的参与以及与工业伙伴的合作，具有更广泛的教育影响。明尼苏达大学（University of Minnesota）的首席研究生将作为IBM团队中一名研究人员的联络点。该学生将负责明尼苏达大学和佐治亚理工学院小组之间准确和及时的信息交流。根据我们的经验，学生直接参与这种类型的互动可以让他们有机会展示主动性，并与行业建立工作关系，这对他们未来的职业生涯有潜在的价值。此外，这些pi在将他们正在进行的研究纳入课堂、对学生的校外演讲和教科书方面有着良好的记录。因此，他们的研究的教育方面达到了观众超出了他们的直接研究小组。