RESEARCH INITIATION AWARD: Low-Disorder Two-Dimensional Electron Systems in InSb

9410015 Santos这项工作将建立一个研究计划，其目标是探索InSb/AlxIn1-XSb异质外延的材料科学，研究InSb量子阱的电学性质，并开发利用其独特属性的新型电子器件。分子束外延技术将用于在GaAs层和InSb层上沉积InSb和AlxIn1-xSb外延层。由于InSb在所有二元III-V化合物中具有最高的本征电子迁移率，因此InSb量子阱在磁场传感器和晶体管中都具有潜在的应用前景。AlxIn1-XSb的使用有望成为发挥这一潜力的关键一步，因为它是一种合适的屏障材料。***

9410015 Santos This work will establish a research program whose objectives are to explore the materials science of InSb/AlxIn1-xSb heteroepitaxy, to study the electrical properties of InSb quantum wells, and to develop novel electron devices which exploit their unique attributes. Molecular beam epitaxy will be used to deposit InSb and AlxIn1-xSb epitaxial layers on GaAs and InSb quantum wells. Since InSb has the highest intrinsic electron mobility of all binary III-V compounds, InSb quantum wells have potential used in both magnetic field sensor and transistor applications. The use of AlxIn1-xSb is expected to be a critical step in fulfilling this potential by serving as a suitable barrier material. ***