RESEARCH INITIATION AWARD: Low-Disorder Two-Dimensional Electron Systems in InSb

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9410015 Santos This work will establish a research program whose objectives are to explore the materials science of InSb/AlxIn1-xSb heteroepitaxy, to study the electrical properties of InSb quantum wells, and to develop novel electron devices which exploit their unique attributes. Molecular beam epitaxy will be used to deposit InSb and AlxIn1-xSb epitaxial layers on GaAs and InSb quantum wells. Since InSb has the highest intrinsic electron mobility of all binary III-V compounds, InSb quantum wells have potential used in both magnetic field sensor and transistor applications. The use of AlxIn1-xSb is expected to be a critical step in fulfilling this potential by serving as a suitable barrier material. ***