RESEARCH INITIATION AWARD: Low-Disorder Two-Dimensional Electron Systems in InSb

研究启动奖：InSb 低无序二维电子系统

• 批准号: 9410015
• 负责人: Michael Santos
• 金额: $ 10万
• 依托单位: University of Oklahoma Norman Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1998-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9410015&HistoricalAwards=false
• 关键词: RESEARCH; INITIATION; AWARD; Low; Disorder

9410015 Santos This work will establish a research program whose objectives are to explore the materials science of InSb/AlxIn1-xSb heteroepitaxy, to study the electrical properties of InSb quantum wells, and to develop novel electron devices which exploit their unique attributes. Molecular beam epitaxy will be used to deposit InSb and AlxIn1-xSb epitaxial layers on GaAs and InSb quantum wells. Since InSb has the highest intrinsic electron mobility of all binary III-V compounds, InSb quantum wells have potential used in both magnetic field sensor and transistor applications. The use of AlxIn1-xSb is expected to be a critical step in fulfilling this potential by serving as a suitable barrier material. ***

9410015桑托斯这项工作将建立一个研究计划，其目标是探索InSb/AlxIn 1-xSb异质外延材料科学，研究InSb量子威尔斯的电学性质，并开发新的电子器件，利用其独特的属性。 分子束外延将用于在GaAs和InSb量子威尔斯上存款InSb和AlxIn 1-xSb外延层。 由于InSb具有所有二元III-V族化合物中最高的本征电子迁移率，因此InSb量子威尔斯阱具有用于磁场传感器和晶体管应用的潜力。 AlxIn 1-xSb的使用被认为是通过用作合适的阻挡材料来实现这一潜力的关键步骤。 ***